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Preparation method of semiconductor structure and semiconductor growth equipment

A semiconductor and equipment technology, which is applied in the preparation of semiconductor structures and semiconductor growth equipment, can solve the problems of poor steepness of the growth interface, etc., and achieve the effect of eliminating dwell and improving the steepness of the interface

Active Publication Date: 2021-10-15
SUZHOU EVERBRIGHT PHOTONICS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Therefore, the technical problem to be solved by the present invention is to overcome the problem of poor steepness of the growth interface in the prior art

Method used

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  • Preparation method of semiconductor structure and semiconductor growth equipment
  • Preparation method of semiconductor structure and semiconductor growth equipment
  • Preparation method of semiconductor structure and semiconductor growth equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] An embodiment of the present invention provides a semiconductor growth equipment, comprising:

[0041] reaction chamber 100;

[0042] a main growth pipeline 110, one end of the main growth pipeline 110 is connected to the reaction chamber 100;

[0043] Vent the main pipeline 120;

[0044] From the first mixing main pipeline to the Mth mixing main pipeline, M is an integer greater than or equal to 1;

[0045] The first reaction gas source group to the Nth reaction gas source group, N is an integer greater than or equal to 2;

[0046] From the first switching valve group to the Nth switching valve group, the kth switching valve group is suitable for controlling the transmission of the gas in the kth reaction gas source group to the jth mixing main pipeline; k is an integer greater than or equal to 1 and less than or equal to N; j is an integer greater than or equal to 1 and less than or equal to M;

[0047] The first growth and vent switching valve to the Mth growth a...

Embodiment 2

[0067] The difference between this embodiment and the previous embodiment is: M is greater than or equal to 2, and M is less than or equal to N, and the kth switching valve group is suitable for switching the gas in the kth reaction gas source group to the jth mixing main pipeline or to the jth mixing main pipeline. Vent the main transmission line.

[0068] The k-th reaction gas source group includes several k-th sub-reaction gas sources, specifically, the k-th reaction gas source group includes Q k The kth reaction gas source, Q k The k-th sub-reaction gas source is respectively the first k-th sub-reaction gas source to the Q-th sub-reaction gas source k The kth sub-reaction gas source. Q k The gas in the kth sub-reaction gas source is different. Q k is an integer greater than or equal to 2. The gases in several kth sub-reaction gas sources are different.

[0069] The k-th switching valve group includes several k-th sub-switching valves, specifically, the k-th switchin...

Embodiment 3

[0081] This embodiment provides a method for preparing a semiconductor structure, using the above-mentioned semiconductor growth equipment, including the following steps:

[0082] Step S1: the kth 1 Switching valve group controls the kth 1 The gas in the reaction gas source group goes to the jth 1 Hybrid Main Pipeline, Section J 1 kth in the mixing supervisor 1 Reactive gas mixture; k 1 is an integer greater than or equal to 1 and less than or equal to N;

[0083] Step S2: the jth 1 Growth vent switching valve switching jth 1 The kth in the mix main pipeline 1 The reaction mixture gas is transported to the growth main pipeline;

[0084] Step S3: the jth 1 Growth vent switching valve switching jth 1 The kth in the mix main pipeline 1 After the reaction mixture gas is transported to the main growth pipeline, the first growth vent switch valve to the Mth growth vent switch valve are all switched to communicate with the vent main pipeline so that the growth interruption...

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Abstract

The invention provides a preparation method of a semiconductor structure and semiconductor growth equipment. The semiconductor growth equipment comprises a reaction chamber, a growth main pipeline, an emptying main pipeline, M mixing main pipelines, N reaction gas source groups, N switching valve groups and M growth and emptying switching valves; one end of the growth main pipeline is connected with the reaction chamber ; M is an integer larger than or equal to 1; N is an integer larger than or equal to 2; the kth switching valve group is suitable for controlling gas in the kth reaction gas source group to be transmitted to the jth mixing main pipeline; k is an integer larger than or equal to 1 and smaller than or equal to N; j is an integer larger than or equal to 1 and smaller than or equal to M; and the jth growth and emptying switching valve is suitable for switching gas in the jth mixed main pipeline to the growth main pipeline or the emptying main pipeline. The semiconductor growth equipment is beneficial to improving the steepness of an interface in the growth process of the semiconductor structure.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a semiconductor structure and semiconductor growth equipment. Background technique [0002] Semiconductor lasers, photodetectors, high electron mobility transistors, etc. are important optoelectronic devices, and have broad market prospects in the industrial and military fields. This type of device mainly uses metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) to make its epitaxial structure, and then uses the wafer process to make the epitaxial wafer into a qualified device. The steepness of the epitaxial heterointerface is one of the key indicators to characterize the quality of the epitaxial growth process, and the steepness of the heterointerface has an important impact on the performance of the device. [0003] Compared with MBE, MOCVD has many advantages such as large growth rate adjustable range, good equipment st...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/44C23C16/455C23C16/52
CPCC23C16/301C23C16/455C23C16/4401C23C16/52C23C16/30C23C16/45512C23C16/45561Y02P70/50
Inventor 程洋王俊肖啸万中军郭银涛庞磊
Owner SUZHOU EVERBRIGHT PHOTONICS CO LTD
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