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Manufacturing method of semiconductor structure and semiconductor structure

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as trench formation and hole formation

Active Publication Date: 2021-10-15
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The main purpose of this application is to provide a method for manufacturing a semiconductor structure and a semiconductor structure to solve the problem in the prior art that holes will be formed in the trenches when filling trenches with high aspect ratios

Method used

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  • Manufacturing method of semiconductor structure and semiconductor structure
  • Manufacturing method of semiconductor structure and semiconductor structure
  • Manufacturing method of semiconductor structure and semiconductor structure

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Embodiment Construction

[0027] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and embodiments.

[0028] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiment of the application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiment of the application. Obviously, the described embodiment is only It is an embodiment of a part of the application, but not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the scope of protection of this application.

[0029] It should be noted that the terms "first" and "second...

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Abstract

The invention provides a manufacturing method of a semiconductor structure and the semiconductor structure, and the manufacturing method comprises the steps of providing a substrate which is provided with a to-be-filled structure, wherein the to-be-filled structure comprises a bottom part and an opening part which are opposite, and a side wall which extends towards the opening part along the bottom part; at least forming the preparatory sacrificial layers on the side walls so as to enable the width of a to-be-filled structure which is not filled to be sequentially reduced along the first direction, wherein the first direction is the direction from the bottom to the opening part; introducing a predetermined gas into the to-be-filled structure which is not filled so as to form a conductive plug in the to-be-filled structure which is not filled, wherein the predetermined gas reacts with the material of the preparatory sacrificial layers. According to the method, the problem that holes are formed in the groove when the groove with the high depth-to-width ratio is filled in the prior art is better solved.

Description

technical field [0001] The present application relates to the field of semiconductors, and in particular, to a method for fabricating a semiconductor structure and the semiconductor structure. Background technique [0002] With the continuous development of semiconductor technology, the size of semiconductor devices is constantly shrinking, and the corresponding reduction in the size of devices on the chip is carried out in proportion, and it is unacceptable to reduce only one feature size on the chip. With the continuous shrinking of the size of semiconductor devices, the traditional low-aspect-ratio trenches gradually evolve into high-aspect-ratio trenches, and it becomes more and more difficult to fill these trenches without gaps. [0003] Therefore, there is an urgent need for a method to solve the problem in the prior art that holes are formed in the trench when filling the trench with a high aspect ratio. [0004] The above information disclosed in the Background sect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L23/48
CPCH01L21/76882H01L21/76847H01L23/481
Inventor 熊少游程磊付家赫
Owner YANGTZE MEMORY TECH CO LTD