Semiconductor package

Abstract

The invention discloses a semiconductor package. The semiconductor package includes a first substrate, a first semiconductor die, a second semiconductor die, a second substrate, at least one first solder ball, at least one second solder ball, and at least one third solder ball. The first semiconductor die is disposed on the first substrate. The second semiconductor die is disposed on the first semiconductor die. The second substrate is disposed on the second semiconductor die. The first solder ball is vertically between the first substrate and the first semiconductor die. The second solder ball is vertically between the second substrate and the second semiconductor die. The third solder ball is vertically between the first substrate and the second substrate.Thereby, the semiconductor package can perform its function well even when an instantaneous large current is required.

Description

technical field [0001] The content of the present invention relates to a semiconductor package. Background technique [0002] Dual-die packaging technology is widely used to package two integrated circuit chips into a single package module, so that the single package module can provide double the function or data storage capacity. Memory chips such as dynamic random access memory (DRAM) chips are usually packaged in this manner to allow a single packaged module to provide double the functionality or data storage capacity. In recent years, various two-chip packaging technologies have been developed and utilized in the semiconductor industry. [0003] In general, gold wires are widely used to transmit current from a power source to a DRAM chip. However, when the DRAM chip requires instantaneous large current during operation (for example, during high frequency operation), the gold wire under high frequency operation will form a large resistance, thereby limiting the transmis...

AI Technical Summary

Problems solved by technology

However, when the DRAM chip needs a large instantaneous current during operation (for example, during high frequency operation), the gold wire under high frequency operation will form a large resistance, thereby limiting the transmission of the instantaneous large current

As a result, there will be a momentary voltage drop in the DRAM chip, which will eventually lead to the malfunction of the chip

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