Semiconductor structure and forming method thereof
A semiconductor and isolation structure technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems that are not completely satisfactory, increased power rail voltage drop, increased power consumption of integrated circuits, etc.
Pending Publication Date: 2021-10-19
TAIWAN SEMICON MFG CO LTD
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- Description
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- Application Information
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Problems solved by technology
This inevitably results in increased voltage drop across the supply rails and increased power dissipation in the integrated circuit
Thus, while existing methods in semiconductor manufacturing are generally adequate for their intended purposes, they are not entirely satisfactory in all respects
Method used
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Embodiment Construction
[0011] The following disclosure provides many different embodiments, or examples, for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include embodiments where the first component is in direct contact with the second component, and may include additional components formed between the first component and the second component An embodiment such that the first part is not in direct contact with the second part. Additionally, the present invention may repeat reference numerals and / or characters in multiple instances. This repetition is for the purposes of simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations ...
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Abstract
A semiconductor structure includes a power rail on a back side of the semiconductor structure, a first interconnect structure on a front side of the semiconductor structure, and a source feature, a drain feature, a first semiconductor fin, and a gate structure that are between the power rail and the first interconnect structure. The first semiconductor fin connects the source feature and the drain feature. The gate structure is disposed on a front surface and two side surfaces of the first semiconductor fin. The semiconductor structure further includes an isolation structure disposed between the power rail and the drain feature and between the power rail and the first semiconductor fin and a via penetrating through the isolation structure and connecting the source feature to the power rail. The embodiment of the invention also relates to a method for forming the semiconductor structure.
Description
technical field [0001] Embodiments of the present application relate to semiconductor structures and methods of forming the same. Background technique [0002] Conventionally, integrated circuits (ICs) are built in a stack with transistors at the lowest level and interconnects (vias and wires) on top of the transistors to provide connectivity to the transistors. Power rails (e.g. metal lines for voltage sources and ground planes) also sit above the transistors and may be part of the interconnect. As integrated circuits continue to shrink, power rails shrink with them. This inevitably results in increased voltage drop across the power rails and increased power dissipation in the integrated circuit. Thus, while existing methods in semiconductor manufacturing are generally adequate for their intended purposes, they are not entirely satisfactory in all respects. Contents of the invention [0003] Some embodiments of the present application provide a semiconductor structure ...
Claims
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IPC IPC(8): H01L27/088H01L27/092H01L21/8234H01L21/8238
CPCH01L27/0886H01L27/0924H01L21/823431H01L21/823475H01L21/823821H01L21/823871H01L21/823418H01L21/76897H01L23/5286H01L21/76224H01L21/823481H01L29/785H01L29/66795H01L29/66636H01L29/7851H01L23/5226H01L23/5283H01L21/823468H01L29/41791H01L29/4175H01L29/66545
Inventor 朱熙甯江国诚王志豪程冠伦
Owner TAIWAN SEMICON MFG CO LTD