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Optical waveguide device

An optical waveguide and buffer layer technology, applied in optics, nonlinear optics, instruments, etc., can solve problems such as size increase

Pending Publication Date: 2021-10-22
FUJITSU OPTICAL COMPONENTS LTD
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

Although conventional LN light modulators (bulk LN modulators) using such LN substrates are widely used, their size is increasing

Method used

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Embodiment Construction

[0026] First, issues related to prior art are discussed. In optical modulators, the voltage applied from the electrodes to the optical waveguide must be properly controlled. In an LN optical modulator, after a voltage is applied and a sufficient time has elapsed, the voltage applied to the optical waveguide changes, a so-called DC drift occurs. In the conventional art, in order to suppress DC drift in a bulk LN optical modulator, a configuration using a material for suppressing DC drift in a buffer layer is described. However, the thin-film LN optical modulator has a structure in which an intermediate layer, a thin-film LN layer, a buffer layer, and electrodes are stacked on a substrate, and DC drift cannot be suppressed by using only a material for suppressing DC drift in the buffer layer.

[0027] Embodiments of the optical waveguide device are described with reference to the drawings. In the embodiments, a thin-film LN light modulator is described as an example of an opti...

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Abstract

An optical waveguide device includes a substrate on which an intermediate layer, a thin-film LN layer of lithium niobate, and a buffer layer are stacked; an optical waveguide formed in the thin-film LN layer; and a plurality of electrodes near the optical waveguide. The intermediate layer and the buffer layer contain a same material of a metal element of any one of group 3 of group 18 of a periodic table of elements.

Description

technical field [0001] Embodiments discussed herein relate to optical waveguide devices. Background technique [0002] In order to increase the speed of optical communication, high-performance optical devices are essential. In optical devices, conventional LN light modulators use lithium niobate (LiNbO 3 , hereinafter referred to as LN) substrate, therefore, good characteristics can be obtained in terms of insertion loss and transmission characteristics. On the LN substrate, an optical waveguide is formed by diffusing titanium (Ti). Although a conventional LN optical modulator (bulk LN modulator) using such an LN substrate is widely used, its size is increasing. [0003] In recent years, demand for smaller optical devices has increased, and research into reducing the size of LN optical modulators used in optical transceivers is also underway. A thin-film LN light modulator using thin-film LN is one such LN light modulator with a smaller size. The thin-film LN optical mo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/225G02F1/03G02F1/035
CPCG02F1/225G02F1/0316G02F1/035G02F2201/07G02F2201/12G02F2202/20
Inventor 牧野俊太郎久保田嘉伸大森康弘土居正治仓桥辉雄竹内信太郎
Owner FUJITSU OPTICAL COMPONENTS LTD
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