ZIF8 derived semiconductor heterojunction-silver SERS substrate, preparation method and application thereof
A heterojunction and semiconductor technology, applied in the field of ZIF8 derived semiconductor heterojunction-silver SERS substrate and its preparation, achieves the effect of reasonable design, good feasibility and enhanced Raman signal
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Embodiment 1
[0044] Prepare ZIF8 derivative semiconductor heterojunction-silver SERS substrate by the method provided by the invention, its flow process is as follows figure 1 As shown, the specific steps are as follows:
[0045] S1. Synthesis of TiO 2 Nanorod array: Place a square fluorine-doped tin dioxide (FTO) film (size 20mm*30mm*2mm) in toluene, acetone, ethanol, and deionized water for 15 minutes, then take 18mL deionized water and 12mL Concentration of 36% hydrochloric acid was prepared as a reaction solution, and added to a 50mL Teflon-lined stainless steel autoclave, stirred with a magnetic stirrer for 5min, then added 0.375mL tetra-n-butyl titanate, stirred for 5min, and washed The clean fluorine-doped tin dioxide (FTO) film leans against the inner wall of the reactor, with the conductive side facing down, and then puts the reactor in an oven for high-temperature reaction. The reaction temperature is 160 ° C, the reaction time is 8 hours, and then cooled to At room temperature...
Embodiment 2
[0049] Prepare ZIF8 derivative semiconductor heterojunction-silver SERS substrate by the method provided by the invention, its flow process is as follows figure 1 As shown, the specific steps are as follows:
[0050] S1. Synthesis of TiO 2 Nanorod array: Place a square fluorine-doped tin dioxide (FTO) membrane (size 20mm*30mm*2mm) in toluene, acetone, ethanol, and deionized water for 10 minutes, then take 18mL deionized water and 12mL Concentration of 36% hydrochloric acid was prepared as a reaction solution, and added to a 50mL Teflon-lined stainless steel autoclave, stirred with a magnetic stirrer for 8 minutes, then added 0.3mL tetra-n-butyl titanate, stirred for 8 minutes, and washed The clean fluorine-doped tin dioxide (FTO) film leans against the inner wall of the reactor, with the conductive side facing down, and then puts the reactor in an oven for high-temperature reaction. The reaction temperature is 150 ° C, the reaction time is 9 hours, and then cooled to At room...
Embodiment 3
[0054] Prepare ZIF8 derivative semiconductor heterojunction-silver SERS substrate by the method provided by the invention, its flow process is as follows figure 1 As shown, the specific steps are as follows:
[0055] S1. Synthesis of TiO 2 Nanorod array: Place a square fluorine-doped tin dioxide (FTO) film (size 20mm*30mm*2mm) in toluene, acetone, ethanol, and deionized water for 20 minutes, and then take 18mL deionized water and 12mL Concentration of 38% hydrochloric acid was prepared as a reaction solution, and added to a 50mL Teflon-lined stainless steel autoclave, stirred with a magnetic stirrer for 10min, then added 0.5mL tetra-n-butyl titanate, stirred for 10min, and washed The clean fluorine-doped tin dioxide (FTO) film leans against the inner wall of the reactor, with the conductive side facing down, and then the reactor is placed in an oven for high-temperature reaction. The reaction temperature is 175 ° C, the reaction time is 6 hours, and then cooled to At room te...
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