Semiconductor package and electronic device including same
A semiconductor and n-type semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device components, circuits, etc., can solve problems such as increase in input ratio, sudden power drop, and lower operating efficiency of storage devices
Pending Publication Date: 2021-11-09
SAMSUNG ELECTRONICS CO LTD
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Problems solved by technology
Situations in which voltage is unstablely supplied to storage devices (power dips or sudden power outages) easily occur when operating with low power, and data loss may occur in such cases, and a method for reducing or preventing such problematic technology
[0003] In addition, when the memory device is operated at high temperature or low temperature, the defense code (defense code) input ratio increases and the delay increases due to the change in the characteristics of the memory cell, and in order to lower the temperature at the time of high temperature operation, the controller may forcibly reduce the memory operation rate. performance and reduce the operating efficiency of the storage device
Method used
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[0051] The voltage measurement circuit 240 according to some example embodiments is connected to the temperature control circuit 230, and may be connected to each of the first transistor 241 and the second transistor 243 through each of the first inverter 242 and the second inverter 244. each. According to some example embodiments, the voltage measurement circuit 240 may be connected to the first transistor 241 and the second transistor 243 without passing through the first inverter 242 and the second inverter 244 .
[0052] The voltage measurement circuit 240 according to some example embodiments may measure the external voltage PWR input into the memory 200 . Although an external voltage is input only to the voltage generator 260 , it may be input in parallel to configurations included in the memory 200 . Power dips or sudden power outages in external voltages can be detected.
[0053] The voltage measurement circuit 240 according to some example embodiments may control th...
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The invention provides a semiconductor package and an electronic device including same. The semiconductor package comprises a semiconductor chip on a substrate, a voltage measurement circuit configured to measure an external voltage to be input into the semiconductor chip and a thermoelectric module configured to convert heat released from the semiconductor chip into an auxiliary power, and configured to apply the auxiliary power to the semiconductor chip, the thermoelectric module being separated from the voltage measurement circuit, wherein the voltage measurement circuit is configured to control the thermoelectric module to apply the auxiliary power to the semiconductor chip in response to a change in the external voltage.
Description
technical field [0001] The present disclosure relates to a semiconductor package and an electronic device including the semiconductor package. Background technique [0002] Recently, when an operation such as data reading and writing is performed on a storage device, research on applying low power to perform the operation is actively being conducted. Situations in which voltage is unstablely supplied to storage devices (power dips or sudden power outages) easily occur when operating with low power, and data loss may occur in such cases, and a method for reducing or preventing such problematic technology. [0003] In addition, when the memory device is operated at high temperature or low temperature, the defense code (defense code) input ratio increases and the delay increases due to the change in the characteristics of the memory cell, and in order to lower the temperature at the time of high temperature operation, the controller may forcibly reduce the memory operation rat...
Claims
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IPC IPC(8): H01L25/16H01L27/11502H01L27/11524H01L27/11551H01L27/1157H01L27/11578H01L27/11585H01L27/22H01L27/24H10N10/10
CPCH01L25/16H10B61/00H10B63/80H10B53/00H10B41/20H10B41/35H10B43/20H10B51/00H10B43/35H01L23/38G11C16/30H01L25/0657H01L2225/06562H01L2225/06506H01L2225/0651H01L2225/06589H01L2224/32145H01L2224/32225H01L2224/48227H01L2224/48145H01L2924/15311H01L25/0652H01L24/38H01L2924/00014H10N10/10H01L2224/73221H01L23/58H01L23/34G11C5/147G11C7/04
Inventor 李址华李庚德
Owner SAMSUNG ELECTRONICS CO LTD