Semiconductor structure and manufacturing method thereof
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve problems such as capacitance signal errors, and achieve the effect of solving threshold voltage instability and avoiding floating body effect.
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[0076]Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted.
[0077] Such as figure 1 and figure 2 as shown, figure 1 Shown is a schematic diagram of a semiconductor structure of an embodiment of the present invention. The semiconductor structure of the embodiment of the present invention includes: a substrate 100, an active column structure 110, a gate dielectric layer, a word line 120a, and a body line 120b. The active column structure 110 is disposed on the substrate 100, including...
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