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A Composite Dielectric Film Based on Heterojunction Double Interface Layer Nanomaterials

A composite dielectric film and nano-material technology, applied in the field of composite dielectric film and flexible electronic device materials, can solve the poor selectivity of the dielectric properties of the polymer matrix, affect the dielectric properties of the composite material system, and the phase between the matrix material and the filler. Capacitance is not good and other problems, to achieve the effect of improving dielectric properties, enriching the working area, and small density

Active Publication Date: 2022-03-15
NANCHANG HANGKONG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the main research goal of traditional dielectric materials at home and abroad is high dielectric constant, and there are outstanding problems including: poor compatibility between matrix materials and fillers, low degree of flexibility, single structure and functionalization of fillers
Compared with the comparative example, the dielectric constant of the composite dielectric material is no more than 30%, and the amount of carbon nitride filler is high, which has poor selectivity for improving the dielectric properties of the polymer matrix, thus affecting the system dielectric properties of the composite material.

Method used

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  • A Composite Dielectric Film Based on Heterojunction Double Interface Layer Nanomaterials
  • A Composite Dielectric Film Based on Heterojunction Double Interface Layer Nanomaterials
  • A Composite Dielectric Film Based on Heterojunction Double Interface Layer Nanomaterials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] (1) Dissolve 1 mmol (0.22 g) of zinc acetate in 22 mL of ethylenediamine, and 2 Stir and dissolve under protective conditions to obtain a zinc (II)-ethylenediamine complex solution;

[0033] (2) Add 1 mmol (0.13 g) of cysteine ​​into the zinc(II)-ethylenediamine complex solution within 20 min and stir until completely dissolved. 2 Protected and stirred for 2 hours to obtain mixture A; the molar ratio of the zinc (II)-ethylenediamine complex to cysteine ​​is 1:1;

[0034] (3) The mixture A is filtered, and the filter cake is obtained after being drained, and the 0.22 g filter cake is mixed with 5 g of urea at a mass ratio of 1:23 to obtain a mixture B;

[0035] (4) Put mixture B into a closed 30 mL crucible, put it into a muffle furnace and heat at 500 °C for 2 hours to obtain mixture C;

[0036] (5) According to the ratio of 0.1 g / 8.6 mL, add 0.34 g of mixture C into 24 mL of ethylenediamine and stir to disperse to obtain solution C; slowly put 0.24 g of cysteine ​​in...

Embodiment 2

[0044] (1) Dissolve 2 mmol of zinc acetate in 45 mL of ethylenediamine under N 2 Stir and dissolve under protective conditions to obtain a zinc (II)-ethylenediamine complex solution;

[0045] (2) Add 2 mmol (0.25 g) of cysteine ​​into the zinc(II)-ethylenediamine complex solution within 20 min and stir until completely dissolved. 2 Protected and stirred for 2 hours to obtain mixture A; the molar ratio of the zinc (II)-ethylenediamine complex to cysteine ​​is 1:1;

[0046] (3) The mixture A is filtered, and the filter cake is obtained after being drained, and the 0.43 g filter cake is mixed with 3g urea at a mass ratio of 1:7 to obtain the mixture B;

[0047] (4) Put mixture B into a closed 30mL crucible, put it in a muffle furnace and heat at 500°C for 2 hours to obtain mixture C;

[0048] (5) According to the ratio of 0.1 g / 8.6 mL, add 0.35 g of mixture C into 30 mL of ethylenediamine and stir to disperse to obtain suspension C; slowly put 0.46 g of cysteine ​​into suspensi...

Embodiment 3

[0056] (1) Dissolve 2 mmol of zinc acetate in 45 mL of ethylenediamine under N 2 Stir and dissolve under protective conditions to obtain a zinc (II)-ethylenediamine complex solution;

[0057] (2) Add 2 mmol (0.25 g) of cysteine ​​into the zinc(II)-ethylenediamine complex solution within 20 min and stir until completely dissolved. 2 Protected and stirred for 2 hours to obtain mixture A; the molar ratio of the zinc (II)-ethylenediamine complex to cysteine ​​is 1:1;

[0058] (3) The mixture A is filtered, and the filter cake is obtained after being drained, and the 0.43 g filter cake is mixed with 1.3 g urea at a mass ratio of 1:3 to obtain the mixture B;

[0059] (4) Put mixture B into a closed 30mL crucible, put it in a muffle furnace and heat at 500°C for 2 hours to obtain mixture C;

[0060] (5) According to the ratio of 0.1 g / 8.6 mL, add 0.35 g of mixture C into 30 mL of ethylenediamine and stir to disperse to obtain suspension C; slowly put 0.46 g of cysteine ​​into suspe...

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Abstract

The invention discloses a composite dielectric film based on heterojunction double interface layer nanomaterials. Specifically, a heterojunction double interface layer nanomaterial combined with zinc sulfide nanosheets and graphite carbon nitride prepared by a solvothermal method is used as a filler, and then combined with Composite polyvinylidene fluoride carrier to prepare a composite dielectric film of heterojunction double interface layer nanomaterials, wherein the mass ratio of heterojunction double interface layer nanomaterials, polyvinylidene fluoride and zinc sulfide nanosheets to the composite dielectric film They are 5~6:100, 94~95:100 and 2.7~4.2:100 respectively. The preparation process of the invention is simple and convenient, and the prepared composite dielectric film has low density, strong mechanical properties and good capacitance, and has broad application prospects in the flexible electronics industry and modern power systems.

Description

technical field [0001] The invention relates to a composite dielectric film based on heterojunction double-interface layer nanomaterials, in particular to flexible electronic device materials, and specifically belongs to the technical field of flexible dielectric materials. Background technique [0002] Dielectric materials refer to substances that can be highly polarized, forming a polarized interface with a certain permittivity under an external electric field. The dielectric material based on polyvinylidene fluoride (PVDF) film is a hot spot in the design and manufacture of flexible capacitors in recent years. It has high electric susceptibility per unit thickness, good flexibility, light weight, and small electrical loss. It provides an important basis for flexible film capacitors and system stability. At present, the main research goal of traditional dielectric materials at home and abroad is high dielectric constant, and there are outstanding problems including: poor ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08J5/18C08L27/16C08K3/30C08K3/28
CPCC08J5/18C08J2327/16C08K2003/3036C08K2201/011C08K3/28
Inventor 刘威阮昶皓李雨刘佳雨晴胡梦可戴文欣邓玉龙黄汶华
Owner NANCHANG HANGKONG UNIVERSITY