Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for realizing crystal orientation deviation of single crystal through multi-wire cutting

A multi-wire cutting and crystal orientation technology, which is applied to fine working devices, material analysis using radiation diffraction, and work accessories, can solve the problems of crystal orientation deviation and low accuracy of single crystal crystals, and improve the crystal orientation deviation. Accuracy, the effect of improving production efficiency

Active Publication Date: 2021-11-26
XIAN ZHONGJING SEMICON MATERIALS CO LTD
View PDF7 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method of multi-wire cutting to realize the crystal orientation deviation of single crystal crystal, which solves the problem of low accuracy when the existing crystal deviates from the orientation cutting

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for realizing crystal orientation deviation of single crystal through multi-wire cutting
  • Method for realizing crystal orientation deviation of single crystal through multi-wire cutting
  • Method for realizing crystal orientation deviation of single crystal through multi-wire cutting

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0090] Single crystal silicon rod 2 length 50mm, [111] crystal orientation, select the tail of single crystal silicon rod for measurement, marked as W, adopt the following method:

[0091] (1) After step 1 to step 5 of the specific embodiment, the crystal orientation values ​​of directions A, B, C, and D are tested to be 14°12', 12°42', 14°16', and 15°46' respectively, And marked at the four points A, B, C, and D at the end of the single crystal silicon rod 2;

[0092] (2) Determine the AC direction as the steel wire cutting feed direction 4, such as figure 2 as shown, and mark the adhesive side 3;

[0093] (3) Through the calculation formula of crystal orientation deviation, calculate the diameter The crystal orientation deviation θ in the direction is 1°32';

[0094] (4) Calculate the actual deviation angle α through the single crystal silicon rod: Calculate the actual deviation angle α of the single crystal silicon rod to be 1.533°;

[0095] (5) Through the calculat...

Embodiment 2

[0100] The length of the single crystal silicon rod 2 is 400 mm, and the crystal orientation is [111], and the tail of the single crystal silicon rod 2 is selected for measurement, marked as W, and the following method is adopted:

[0101] (1) After step 1 to step 5 of the specific embodiment, the crystal orientation values ​​of directions A, B, C, and D are respectively 14°00′, 15°41′, 14°28′, and 12°47′, And marked at the four points A, B, C, and D at the end of the silicon rod 2;

[0102] (2) Determine the AC direction as the steel wire cutting feed direction 4, and mark the adhesive surface 3;

[0103] (3) Through the calculation formula of crystal orientation deviation θ: Calculate the diameter The crystal orientation deviation θ in the direction is 1°27';

[0104] (4) The formula for calculating the actual deviation angle α of the single crystal silicon rod 2: Calculate the actual deviation angle α of the single crystal silicon rod 2 to be 1.450°;

[0105] (5) Ca...

Embodiment 3

[0110] The length of single crystal silicon rod 2 is 300mm, [111] crystal orientation, and the tail of single crystal crystal rod 2 is selected for measurement, marked as W, which requires the crystal orientation deviation of the single crystal silicon wafer towards the [110] orientation closest to it after cutting γ is within 4°±0.5°, adopt the following method:

[0111] (1) After step 1 to step 5 of the specific embodiment, the crystal orientation values ​​of directions A, B, C, and D are respectively 14°23′, 14°52′, 14°05′, and 13°36′, And marked at the four points A, B, C, and D at the end of the silicon rod 2;

[0112] (2) Determine the AC direction as the steel wire cutting feed direction 4, and mark the adhesive surface 3;

[0113] (3) The formula for calculating the degree of deviation θ of the crystal orientation of the single crystal silicon rod 2: Calculate the diameter of the single crystal silicon rod 2 The crystal orientation deviation θ in the direction is ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for realizing crystal orientation deviation of a single crystal through multi-line cutting. The method comprises the following steps of testing the crystal orientation value of a single crystal silicon rod to be tested by using an X-ray crystal diffractometer, and calculating the crystal orientation deviation degree of the single crystal silicon rod to be tested; determining the deviation direction, and calculating the deviation distance; and carrying out multi-line cutting. The single crystal silicon rod with a certain length is cut into a plurality of silicon wafers with consistent thickness and consistent crystal orientation deviation degree through multi-wire cutting, the problems of inconvenient operation, low cutting efficiency and precision, great material loss and the like in cutting after pre-cutting and orienting of blocks are solved, the production efficiency is greatly improved, and the crystal orientation deviation precision is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor crystal cutting, and in particular relates to a method for realizing crystal orientation deviation of a single crystal by multi-wire cutting. Background technique [0002] Because single crystal silicon has a unique anisotropic property, it has an impact on single crystal manufacturing, epitaxial growth, device manufacturing, die scribing, etc., but various semiconductor devices have different requirements for crystal orientation deviation , Different requirements of crystal orientation deviation can show certain advantages in semiconductor performance, optical performance, electromagnetic performance and mechanical performance. [0003] The degree of crystal orientation deviation is when the crystal direction deviates from the crystal axis, and the angle at which it deviates is called the degree of crystal orientation deviation. Since the degree of crystal orientation deviation may affect ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04B28D7/00G01N23/20
CPCB28D5/0058B28D5/045G01N23/20
Inventor 李兴鹏曹榛苏江涛张翠芸师伟
Owner XIAN ZHONGJING SEMICON MATERIALS CO LTD