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Partial discharge simulation device and method for crimping type IGBT

A partial discharge, analog device technology, applied in the field of circuits, can solve the problem of lack of crimping IGBT and other problems

Pending Publication Date: 2021-12-03
XI AN JIAOTONG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is a lack of devices for simulating the partial discharge of IGBTs in the traditional technology, especially the lack of devices for simulating the partial discharge of crimp-type IGBTs

Method used

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  • Partial discharge simulation device and method for crimping type IGBT
  • Partial discharge simulation device and method for crimping type IGBT
  • Partial discharge simulation device and method for crimping type IGBT

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Embodiment Construction

[0074] In order to make the purpose, technical scheme and advantages of the application more clear, the crimping IGBT partial discharge simulation device and method of the application are further described in detail through the embodiment and in combination with the attached drawings. It should be understood that the specific embodiments described herein are only used to explain the application and are not used to limit the application.

[0075] In this paper, the serial number of components itself, such as "first", "second", etc., is only used to distinguish the described objects and does not have any sequence or technical meaning. The "connection" and "connection" mentioned in this application include direct and indirect connection (connection) unless otherwise specified. In the description of this application, it should be understood that the azimuth or positional relationship indicated by the terms "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top"...

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Abstract

The invention relates to a partial discharge simulation device and method for a crimping type IGBT. The partial discharge simulation device of the crimping type IGBT comprises the following components of: a box body which is provided with an accommodating cavity; a simulation sample piece which is arranged in the accommodating cavity, and the material of the simulation sample piece being the same as that of an insulating layer of an IGBT to be simulated; a high-voltage electrode which is arranged in the accommodating cavity; a grounding electrode which is arranged in the accommodating cavity, the grounding electrode and the high-voltage electrode being arranged in a spaced mode, at least one of the high-voltage electrode and the grounding electrode contacting with the simulation sample piece; and a high-voltage power supply which is electrically connected with the high-voltage electrode and is used for providing high-voltage electricity for the high-voltage electrode. According to the partial discharge simulation device and method for the crimping type IGBT provided by the invention, the simulation of the partial discharge of the crimping type IGBT can be realized.

Description

technical field [0001] The application relates to the field of circuits, in particular to a crimped IGBT partial discharge simulation device and method. Background technology [0002] IGBT (insulated gate bipolar transistor) is a composite fully controlled voltage driven power semiconductor device composed of BJT (bipolar junction transistor) and MOS (metal oxide semiconductor). IGBT is very suitable for current conversion systems with DC voltage of 600V and above, such as power equipment in the fields of AC motor, frequency converter, switching power supply, lighting circuit, traction drive and so on. [0003] IGBT is divided into welding type IGBT and crimping type IGBT. The internal electrical insulation defect of IGBT will lead to partial discharge, which will cause damage to power equipment. Therefore, the research on the partial discharge characteristics of IGBT is very important. However, the traditional technology lacks the device to simulate IGBT partial discharge, espec...

Claims

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Application Information

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IPC IPC(8): G01R31/12
CPCG01R31/129
Inventor 祝令瑜刘琛硕汲胜昌占草刘占磊侯婷
Owner XI AN JIAOTONG UNIV
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