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Semiconductor device

A semiconductor and transistor technology, applied in the field of reverse conducting semiconductor devices, can solve the problems of avalanche current generation, damage tolerance, and difficulty in extending the depletion layer, and achieve the effect of improving recovery damage tolerance and suppressing avalanche action

Pending Publication Date: 2021-12-03
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The RC-IGBT has a problem that, if the current density of the freewheeling diode is increased, and light ions are implanted directly below the p-type anode to form a lifetime control layer for local lifetime control, the problem with the More carriers are generated in the middle of the drift layer than on the back side, and the depletion layer is difficult to extend, so an avalanche current is generated during the recovery operation, and the recovery damage resistance is reduced

Method used

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Embodiment approach 1

[0043] figure 1 It is a plan view showing a semiconductor device 100 that is an RC-IGBT (Reverse Conducting Insulated Gate Bipolar Transistor: reverse conducting IGBT) according to the first embodiment. in addition, figure 2 It is a top view of the semiconductor device 101 which is an RC-IGBT showing another structure of the first embodiment. figure 1 The illustrated semiconductor device 100 is a semiconductor device in which IGBT regions 10 and diode regions 20 are arranged in stripes, which may be simply referred to as “stripe type”. At once figure 2 In the shown semiconductor device 101 , a plurality of diode regions 20 are arranged vertically and laterally, and IGBT regions 10 are arranged around the diode regions 20 , which can be referred to as “island type” for short.

[0044]

[0045] exist figure 1 Among them, the semiconductor device 100 has the IGBT region 10 and the diode region 20 in one semiconductor device. The IGBT regions 10 and the diode regions 20 e...

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Abstract

Provided is an RC-IGBT in which an avalanche operation in a recovery operation is suppressed and recovery breakdown tolerance is improved. In a semiconductor device in which a transistor and a diode are formed on a common semiconductor substrate, a diode region has: a fifth semiconductor layer of a second conductivity type provided on a second main surface side of the semiconductor substrate; a second semiconductor layer of a second conductivity type provided on the fifth semiconductor layer; a third semiconductor layer of the first conductivity type provided on the first main surface side of the semiconductor substrate than the second semiconductor layer; a sixth semiconductor layer of the first conductivity type provided on the third semiconductor layer; a second electrode electrically connected to the sixth semiconductor layer; a first electrode electrically connected to the fifth semiconductor layer; and a lifetime control layer comprising a crystal defect layer, the lifetime control layer reaching a position deeper than an intermediate position of the second semiconductor layer between a thickness direction end portion of the third semiconductor layer from the first main surface side and a thickness direction end portion of the fifth semiconductor layer from the second main surface side.

Description

technical field [0001] The present invention relates to a semiconductor device, in particular to a reverse conducting semiconductor device. Background technique [0002] A reverse conducting semiconductor device (RC-IGBT: Reverse Conducting Insulated Gate Bipolar Transistor) is a semiconductor device in which an IGBT (Insulated Gate Bipolar Transistor) and a freewheeling diode (FWD: Free Wheeling Diode) are formed on a common semiconductor substrate. [0003] For example, in the RC-IGBT disclosed in Patent Document 1, in order to reduce the recovery current, local lifetime control by implanting light ions directly under the p-type anode is performed. [0004] Patent Document 1: Japanese Patent Laid-Open No. 2011-216825 [0005] The RC-IGBT has a problem that, if the current density of the freewheeling diode is increased, and light ions are implanted directly below the p-type anode to form a lifetime control layer for local lifetime control, the problem with the Since more ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/861H01L29/739H01L27/06
CPCH01L27/0629H01L29/0684H01L29/8613H01L29/7398H01L29/7397H01L29/32H01L29/407H01L29/0619H01L29/66136H01L27/0727H01L29/0696H01L29/66348H01L29/861H01L29/045H01L27/0676
Inventor 曾根田真也原田健司大塚翔瑠
Owner MITSUBISHI ELECTRIC CORP