Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Polishing pad with grooves in surface

A polishing pad and groove technology, applied in the field of polishing pads, can solve the problems of low utilization of polishing liquid, affecting polishing quality, and over-polishing at the edge, so as to improve polishing uniformity, ensure polishing quality, and prevent over-polishing at the edge.

Pending Publication Date: 2021-12-07
广东粤港澳大湾区黄埔材料研究院
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The existing polishing pad has the following problems: due to the circular motion of the polishing pad, when the polishing liquid moves from the center to the outside, it will inevitably accelerate the movement, and the higher moving speed of the polishing liquid will not only cause the problem of low utilization of the polishing liquid, but also Can cause overpolishing at the edge, affecting polishing quality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing pad with grooves in surface
  • Polishing pad with grooves in surface
  • Polishing pad with grooves in surface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Such as figure 1 As shown, the polishing pad provided in this embodiment includes a substrate layer (not shown in the figure) and a polishing layer 1 , and the surface of the polishing layer 1 is provided with a first groove 3 , a second groove 4 and a third groove 5 . The first groove 3 is a double helix starting from the center of the circle. The width of the first groove 3 is D1, 1mm≤D1≤3mm, for example, it can be 1mm, 1.5mm, 1.7mm, 2.1mm, 2.4mm, 3mm, etc. The depth of the first groove 3 is H1, 0.5mm≤H1≤2mm, for example, it can be 0.5mm, 0.7mm, 1.2mm, 1.8mm, 2mm and so on. The radial spacing of the first groove 3 Wherein, a is a parameter, 1≤a≤15, θ is the angle between a straight line connecting any point of the first groove 3 to the center of the circle and the horizontal direction, 0≤θ≤nΠ, n is an integer. Wherein, the spacing of the first grooves 3 along the radial direction is the same.

[0040] read on figure 1 , the second groove 4 is distributed along th...

Embodiment 2

[0044] Such as Figure 2a - Figure 2c As shown, the difference between the polishing pad provided in this embodiment and the first embodiment is only that the distance between the first grooves 3 gradually decreases radially from the center of the polishing layer 1 .

[0045] Specifically, when the distances between the first grooves 3 are equal, the velocity of the polishing liquid will gradually increase when it moves toward the edge, and certain uneven polishing will occur. In this embodiment, after the distance between the first grooves 3 is reduced radially, the change in the tangential velocity of the polishing fluid flowing along the grooves is effectively delayed, the velocity distribution of the polishing fluid along the tangential direction is effectively improved, and the phenomenon of uneven polishing is reduced. .

[0046] Other parts of this embodiment are the same as those of Embodiment 1 and will not be repeated here.

Embodiment 3

[0048] Such as image 3 As shown, the difference between the polishing pad provided in this embodiment and the second embodiment is only that the shape of the middle region of the second groove 4 is a sinusoidal function.

[0049] Specifically, it can be set that the center area on the surface of the polishing layer 1 is the first grinding area 6, the edge area is the third grinding area 7, and the area between the first grinding area 6 and the third grinding area 7 It is the second grinding area 2 , and the middle area of ​​the second groove 4 is basically located in the second grinding area 2 . The polishing liquid flows out in a straight line from the center of the circle in the first grinding area 6 along the second groove 4, which effectively improves the problem of uneven pressure distribution in the central area; the polishing liquid flows out in the second grinding area 2 along the sinusoidal trajectory of the second groove 4 , effectively increasing the contact time ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of chemical-mechanical polishing, and discloses a polishing pad with grooves in the surface. The polishing pad comprises a circular polishing layer, and the polishing layer is provided with first grooves, second grooves and third grooves; the first grooves are located in the surface of the polishing layer and spirally extend to the edge of the polishing layer with the circle center of the polishing layer as the starting point; the second grooves are located in the surface of the polishing layer and extend to the edge of the polishing layer in the radial direction with the circle center of the polishing layer as the starting point; and the third grooves are located in the surface of the polishing layer and extend to the edge of the polishing layer with certain points on the second grooves as the starting point. According to the polishing pad, the tangential acceleration of a polishing solution can be regulated and controlled through the spirally-extending first grooves, the polishing solution is uniformly distributed, the removal rate is improved, the radial acceleration of the polishing solution can be regulated through the radially-extending second grooves and the third grooves forming Y shapes with the second grooves, the speed change of the polishing solution is delayed, and the retention time of the polishing solution is prolonged.

Description

technical field [0001] The invention relates to the technical field of chemical mechanical polishing, in particular to a polishing pad with grooves on the surface. Background technique [0002] With the development of the silicon integrated circuit technology industry, affected by the cost, the size of the silicon chip used increases, the integration of electronic components on it increases, and the feature size of the device is also continuously reduced. In order to ensure the quality of photolithography in the silicon wafer preparation process, the surface flatness of the silicon wafer is required to reach the nanometer level. Chemical mechanical polishing is currently the only method that can achieve global planarization of silicon wafers. The polishing pad is an important consumable in the chemical mechanical polishing process, which undertakes the functions of physical polishing and transportation of polishing fluid, and its quality directly affects the polishing effec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/26
CPCB24B37/26
Inventor 杨小牛王杰袁黎光肖亮锋楚慧颖吴泽佳
Owner 广东粤港澳大湾区黄埔材料研究院
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com