Polishing pad with grooves in surface

Abstract

The invention relates to the technical field of chemical-mechanical polishing, and discloses a polishing pad with grooves in the surface. The polishing pad comprises a circular polishing layer, and the polishing layer is provided with first grooves, second grooves and third grooves; the first grooves are located in the surface of the polishing layer and spirally extend to the edge of the polishing layer with the circle center of the polishing layer as the starting point; the second grooves are located in the surface of the polishing layer and extend to the edge of the polishing layer in the radial direction with the circle center of the polishing layer as the starting point; and the third grooves are located in the surface of the polishing layer and extend to the edge of the polishing layer with certain points on the second grooves as the starting point. According to the polishing pad, the tangential acceleration of a polishing solution can be regulated and controlled through the spirally-extending first grooves, the polishing solution is uniformly distributed, the removal rate is improved, the radial acceleration of the polishing solution can be regulated through the radially-extending second grooves and the third grooves forming Y shapes with the second grooves, the speed change of the polishing solution is delayed, and the retention time of the polishing solution is prolonged.

Description

technical field

[0001] The invention relates to the technical field of chemical mechanical polishing, in particular to a polishing pad with grooves on the surface. Background technique

[0002] With the development of the silicon integrated circuit technology industry, affected by the cost, the size of the silicon chip used increases, the integration of electronic components on it increases, and the feature size of the device is also continuously reduced. In order to ensure the quality of photolithography in the silicon wafer preparation process, the surface flatness of the silicon wafer is required to reach the nanometer level. Chemical mechanical polishing is currently the only method that can achieve global planarization of silicon wafers. The polishing pad is an important consumable in the chemical mechanical polishing process, which undertakes the functions of physical polishing and transportation of polishing fluid, and its quality directly affects the polishing effec...

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