Positioning pattern transfer etching device and etching method thereof

Abstract

The invention discloses a positioning pattern transfer etching device, which comprises a conveying device and a transfer assembly arranged above the conveying device, wherein the conveying device is provided with a plurality of grooves, each silicon wafer is adhered with an etching cavity according to a photoresist pattern, the size of the cross section of each layer of etching cavity is sequentially increased from top to bottom, each layer of etching cavity is constructed by annular fibers, each annular fiber is connected through a supporting fiber for reinforcement, the supporting fiber extends towards the inner side of the etching cavity by a certain length, at least the top end and the tail end of an extension part are respectively coated with a super-hydrophilic medium layer and a super-hydrophobic medium layer, the transfer assembly comprises a plurality of precise control heads, and each precise control head comprises a distance sensor, a spray head and a telescopic control rod. According to the equipment, etching liquid is loyalty sprayed into an etching cavity according to a photoresist pattern on the surface of a silicon wafer; and through accurate positioning of the accurate control head, the problem of etching liquid dripping dislocation is reduced, the flatness of the liquid level is accurately controlled, and accurate control over the liquid thickness is achieved.

Description

technical field [0001] The present invention relates to the field of precise positioning technology or the field of pattern transfer technology, in particular to an etching device for positioning pattern transfer and an etching method thereof. Background technique [0002] Pattern transfer technology is to faithfully transfer the pattern that needs to be left to other materials. This step plays a very important role in the manufacturing process of semiconductor integrated circuits. During silicon wafer fabrication, unwanted material is removed from the wafer surface by etching. The most common etching method is wet etching. Wet etching is a technology that uses the chemical reaction of solutions and films to remove the parts that need to be etched to form micro-nano pattern structures on various functional materials. [0003] Existing etching equipment cannot accurately control the etching solution added to each silicon wafer, and the positioning accuracy is not enough duri...

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Problems solved by technology

[0003] Existing etching equipment cannot accurately control the etching solution added to each silicon wafer, and the positioning accuracy is not enough during etching, which may easily cause misalignment of etching solution addition, and large-scale etching production cannot be carried out processing

[0004] In view of this, it is necessary to improve the etching equipment in the prior art to solve the problems of difficult control of the etching depth of silicon wafers, dislocation of etching liquid droplets, and low efficiency of etching production and processing.

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