Silicon wafer surface pattern etching equipment and processing method thereof

Abstract

The invention discloses silicon wafer surface pattern etching equipment, which comprises an operation surface and an etching liquid control assembly, and is characterized in that the operation surface is provided with a groove for mounting a silicon wafer, a silicon wafer array is provided with a plurality of segmentation areas, each silicon wafer is adhered with an accommodating structure in the corresponding segmentation area according to a photoresist pattern, the accommodating structure is formed by constructing reinforced fibers and is bonded through a plurality of supporting fibers, the supporting fibers extend towards the inner side of the accommodating structure by a certain length, the extending ends of the supporting fibers are coated with super-hydrophilic medium layers, each segmentation area corresponds to an operation head, each operation head is provided with a dripping pipe, a flow guide fiber, a moisture absorption fiber, a plurality of telescopic drill pipes and a liquid level detection instrument, and the surfaces of the flow guide fiber and the moisture absorption fiber are respectively coated with a super-hydrophobic medium layer and a super-hydrophilic medium layer. According to the device, coarse dropwise adding, fine dropwise adding and fine moisture absorption of the etching liquid can be achieved through the operation head, accurate control over the liquid thickness of the etching liquid is achieved, and the flatness of the liquid level is accurately controlled through the telescopic drill pipe on the operation head and the liquid level detection instrument.

Description

technical field [0001] The invention relates to the technical field of silicon wafer production or the technical field of wet etching, in particular to a silicon wafer surface pattern etching device and a processing method thereof. Background technique [0002] During silicon wafer fabrication, unwanted material is removed from the wafer surface by etching. The most common treatment method is wet etching. Wet etching is a technology that uses the chemical reaction of the solution and the film to remove the part that needs to be etched to form a micro-nano pattern structure on various functional materials. [0003] Etching requirements depend on the type of feature pattern to be produced, such as aluminum alloy wiring, polysilicon gate, shallow trench isolation region. Due to the complex structure of the device, the wafer has a large number of materials requiring different etching parameters, which makes it difficult to control the accuracy of etching. With the shrinking of...

AI Technical Summary

Problems solved by technology

It is designed to solve the problem that the etching depth is difficult to control accurately and the silicon wafer surface is not evenly etched in the wet etching device

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