SiC MOSFET device and preparation method thereof
A device and epitaxy technology, which is applied in the field of SiC MOSFET devices and its preparation, can solve problems such as gate oxide breakdown, achieve the effects of increasing breakdown voltage, not being easy to break down, and improving reliability
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[0100] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments for understanding the inventive concepts of the present application, and cannot represent All the embodiments are not explained as the only embodiment. Based on the embodiments in the present application, all other embodiments obtained by persons of ordinary skill in the art on the premise of understanding the inventive concepts of the present application fall within the protection scope of the present application.
[0101] It should be noted that if there is a directional indication (such as up, down, left, right, front, back...) in the embodiment of the present application, the directional indication is only used to explain the relationship between the components in a certain posture. If the s...
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