Semiconductor device

A technology of semiconductor and field plate, applied in the direction of semiconductor devices, electrical components, circuits, etc.

Pending Publication Date: 2021-12-28
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While existing gate field plates are generally adequate, they are not satisfactory in every way

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

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Embodiment Construction

[0030] The following disclosure provides a number of embodiments, or examples, for implementing various elements of the provided subject matter. Specific examples of each element and its configuration are described below to simplify the description of the embodiments of the present invention. Of course, these are just examples, not intended to limit the embodiments of the present invention. For example, if a description mentions that a first element is formed on a second element, it may include an embodiment in which the first and second elements are in direct contact, or may include an additional element formed between the first and second elements , so that they are not in direct contact with the example. In addition, the embodiments of the present invention may repeat reference numerals and / or letters in various examples. This repetition is for the purpose of brevity and clarity and not to show the relationship between the different embodiments and / or configurations discu...

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PUM

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Abstract

The embodiment of the invention provides a semiconductor device. The semiconductor device comprises a substrate; a first well and a second well disposed in the substrate and adjacent to each other; an isolation structure disposed on the first well; a first field plate arranged on the isolation structure; a gate structure which stretches across the first well and the second well, wherein an opening is formed between the first field plate and the gate structure, and the opening exposes one edge, close to the gate structure, of the isolation structure; a drain electrode structure arranged in the first well; and a source structure disposed in the second well to reduce or prevent a hot carrier effect.

Description

technical field [0001] Embodiments of the present invention relate to a semiconductor device, in particular to a semiconductor device including a field plate. Background technique [0002] Semiconductor devices can be used in various fields, such as display driver ICs, power management ICs (or high-power power management ICs), discrete power devices, sensing devices, fingerprint recognition ICs, and memories. Semiconductor devices are usually manufactured in the following manner: sequentially deposit insulating or dielectric layers, conductive layers, and semiconductor material layers on a semiconductor substrate, and use photolithography to pattern the various material layers to form circuit components and elements on it . [0003] In order to improve the breakdown voltage (breakdown voltage) of the semiconductor device, in addition to optimizing the well and the drift region between the source and the drain, in general, the gate is also extended (such as extending to the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423H01L29/40
CPCH01L29/402H01L29/42356H01L29/7816
Inventor 钟怡青张睿钧曾富群何玉萍
Owner VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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