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Double-vacuum-chamber wafer proton irradiation device and irradiation method

A proton irradiation, double vacuum technology, applied in irradiation devices, nuclear engineering, electrical components, etc., can solve the problem that insulated gate bipolar transistors lack the deep proton irradiation production process, cannot be used together with IGBT chips, and cannot match the performance of imported chips. Compared with other problems, to achieve the effect of reducing ray damage, small energy divergence and large capacity

Active Publication Date: 2022-01-07
国核铀业发展有限责任公司 +2
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Problems solved by technology

[0003] However, the performance of domestic insulated gate bipolar transistor (IGBT) and other power chips cannot be compared with imported chips due to the lack of deep proton irradiation production technology
In addition, the current domestically produced fast recovery diode (FRD) chips are also unable to achieve the performance of a softness factor above 2 due to the lack of deep proton irradiation technology, and cannot be used in conjunction with IGBT chips in fields such as electric vehicles

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  • Double-vacuum-chamber wafer proton irradiation device and irradiation method
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Embodiment Construction

[0043] In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments These are some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0044] figure 1 Shown is a side view of the dual vacuum chamber wafer proton irradiation apparatus of the present invention. figure 2 Shown is a cross-sectional view of the wafer-changing vacuum chamber of the dual-vacuum chamber wafer proton irradiation device of the present invention.

[0045] see figure 1 . The double vacuum...

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Abstract

The invention provides a double-vacuum-chamber wafer proton irradiation device and irradiation method. The double-vacuum-chamber wafer proton irradiation device comprises a wafer irradiation vacuum chamber and a wafer changing vacuum chamber, and the wafer irradiation vacuum chamber and the wafer changing vacuum chamber communicate through a connecting vacuum section; a shielding wall is arranged outside the connecting vacuum section; and the wafer irradiation vacuum chamber is arranged in an irradiation hall, the wafer changing vacuum chamber is arranged in an irradiation front hall, and the irradiation hall and the irradiation front hall are sealed and isolated by the shielding wall. The irradiation device is very suitable for high-energy proton irradiation, is beneficial to greatly reducing ray damage to workers, can realize uniform irradiation of wafers, improves the irradiation quality, is large in capacity, improves the production efficiency, ensures stable transmission and effective in-place of wafer trays, and does not cause activation to the atmosphere. The irradiation precision can be improved from two aspects, and the production of a high-performance IGBT chip and the manufacturing of a fast soft recovery diode with a softness factor larger than 2 can be realized.

Description

technical field [0001] The invention belongs to the field of power chip manufacturing, and particularly relates to a double vacuum chamber wafer proton irradiation device and an irradiation method. Background technique [0002] At present, with the rapid development of electric vehicles, high-speed rail transit, UHV flexible direct current transmission, new energy power generation and other fields, the demand for high-end power chips is increasing. According to statistics, China will need IGBTs in 2020. 93% of high-end power chips need to be imported. With the development of emerging industries such as mobile smart terminals, 5G networks, and the Internet of Things, new semiconductor discrete devices continue to emerge. While replacing the original market applications, they will continue to explore emerging application fields. At the same time, in order to make existing semiconductor discrete devices adapt to the rapid changes in market demand, it is necessary to adopt new ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G21K5/00H01L21/263
CPCG21K5/00H01L21/263
Inventor 吕银龙葛涛王婉琳张俊新冯雨石玉博郭如勇孙玺
Owner 国核铀业发展有限责任公司
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