Production method for monocrystalline silicon wafer and monocrystalline silicon wafer
A manufacturing method, silicon wafer technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve problems such as deterioration of electrical characteristics, and achieve the effect of improving strength
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Embodiment 1
[0064] First, prepare a diameter of 300mm, , P type, 10Ωcm, oxygen concentration of 14ppma (JEITA), and the entire surface of the defect area is N V area of monocrystalline silicon CW wafers. The CW wafer was subjected to a temperature of 1225-1300°C for 9 seconds, NH 3 +Heat treatment in Ar atmosphere as RTA treatment. Thereafter, PW processing was performed with the target processing amount set to 6 μm. Thus, the nitride film formed in the RTA process is removed. Finally, a heat treatment at a temperature of 1200° C. for 2 hours under an Ar atmosphere was performed as a BMD formation heat treatment. The DZ layer thickness and BMD density were measured for the obtained single crystal silicon wafer. DZ layer thickness is 6.7~10.5μm, BMD density is 1.8×10 11 ~4.9×10 11 / cm 3 . also, Figure 4The RTA treatment temperature is 1300 °C, the DZ layer thickness is 6.7 μm, and the BMD density is 4.9×10 11 / cm 3 TEM image of the cross-section.
[0065] In addition, RTA tr...
Embodiment 2
[0070] Samples were prepared under the same conditions as in Example 1, except that a single-crystal silicon CW wafer having an oxygen concentration of 12 ppma (JEITA) was used and the RTA treatment temperature was set at 1225 to 1250° C. The DZ layer thickness of the obtained monocrystalline silicon wafer is 10.3-12.3 μm, and the BMD density is 1.3×10 11 ~1.7×10 11 / cm 3 . The difference in the Rost length is 0.5 to 6.0 μm.
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