High-voltage device dynamic characteristic test circuit, platform and method

A high-voltage device and test circuit technology, applied in the field of power electronics, can solve the problems of small on-resistance switching speed, etc., and achieve the effect of a safe and reliable test method

Pending Publication Date: 2022-01-11
ZHEJIANG UNIV
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Problems solved by technology

SiC MOSFET has the characteristics of small on-resistance and fast switching speed. Compared with traditional silicon devices, the switching speed of SiC MOSFET can be higher by an order of magnitude or more, which makes it generate extremely large dv / dt values ​​and di / dt value, strong electromagnetic interference coupled to the parasitic parameters of the test circuit will cause voltage and current spikes and noise interference in the power circuit, which poses a great challenge to the accurate test of its dynamic characteristics

Method used

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  • High-voltage device dynamic characteristic test circuit, platform and method
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[0053] The following description and the accompanying drawings sufficiently illustrate specific embodiments herein to enable those skilled in the art to practice them. Portions and features of some embodiments may be included in or substituted for those of other embodiments. The scope of the embodiments herein includes the full scope of the claims, and all available equivalents of the claims. Herein, the terms "first", "second", etc. are only used to distinguish one element from another element without requiring or implying any actual relationship or order between these elements. In fact the first element can also be called the second element and vice versa. Furthermore, the terms "comprising", "comprising" or any other variation thereof are intended to cover a non-exclusive inclusion such that a structure, means or apparatus comprising a series of elements includes not only those elements but also other elements not expressly listed elements, or also elements inherent in th...

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Abstract

The invention belongs to the technical field of power electronics, and discloses a high-voltage device dynamic parameter test circuit which comprises a high-voltage direct-current power supply, a charging and discharging relay, a bus capacitor, a load inductor, a tested element and a controller. The high-voltage direct-current power supply provides corresponding bus voltage according to a test working condition set by the upper computer; the charging and discharging relay is used for controlling charging and discharging of the bus capacitor; the bus capacitor is used for providing instantaneous power during dynamic parameter testing; the load inductor is used for providing instantaneous current under the dynamic parameter test; the tested element is switched on or switched off according to the received test signal, and the switch dynamic parameter of the tested element is tested; and the controller is used for controlling the on-off of the charging and discharging relay and triggering a double-pulse driving signal of the tested element. The invention provides a novel, convenient, safe and reliable high-voltage device dynamic parameter test means. The embodiment of the invention further discloses a high-voltage device dynamic parameter test platform and method.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a high-voltage device dynamic characteristic test circuit, a test platform and a test method, especially for the dynamic characteristic test of a high-voltage fast device SiC MOSFET. Background technique [0002] Power semiconductor devices are the basic active components that make up power electronic devices, and determine the application level of power electronic devices. The continuous development of high-power power electronic conversion technologies such as new energy grid-connected and flexible DC transmission provides a broad space for the application of power semiconductor devices. High-voltage devices are the core devices in high-power applications, especially power systems and high-power electric drives. The current high-voltage devices are mainly silicon-based IGBTs. With the rapid development of wide bandgap semiconductor technology represented by silicon c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/2607G01R31/2601G01R31/2621G01R31/2608
Inventor 张军明李欣宜
Owner ZHEJIANG UNIV
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