Dual-channel gate drive circuit and dual-channel gate drive chip

A technology of gate drive circuit and pre-drive circuit, which is applied in the direction of electrical components, output power conversion devices, etc., can solve the problems of dual-channel up-down direct connection, etc., and achieve the effect of avoiding dual-channel up-down direct connection and improving driving reliability

Pending Publication Date: 2022-01-25
茂睿芯(深圳)科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a dual-channel gate drive circuit, which aims to solve the problem of dual-channel up-down direct connection in the traditional dual-channel gate drive circuit

Method used

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  • Dual-channel gate drive circuit and dual-channel gate drive chip
  • Dual-channel gate drive circuit and dual-channel gate drive chip
  • Dual-channel gate drive circuit and dual-channel gate drive chip

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Embodiment Construction

[0048] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention, the present invention will be described in further detail below with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are intended to explain the present invention and is not intended to limit the invention.

[0049] Moreover, the term "first", "second" is used only for the purpose of describing, and cannot be understood as an indication or implies a relative importance or implicitting the number of indicated techniques. Thus, features with "first", "second" may be indicated or implicitly including one or more of this feature. In the description of the invention, the meaning of "multiple" is two or more, unless otherwise specifically defined.

[0050] The first aspect of the embodiment of the present invention has a dual-channel gate driving circuit.

[0051] like figure 1 Distanc...

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Abstract

The invention is suitable for the technical field of switch driving, and particularly relates to a dual-channel gate driving circuit and a dual-channel gate driving chip. The dual-channel gate drive circuit comprises a first detection control circuit, a second detection control circuit, a parallel detection circuit, a pre-drive circuit, a first pull-up bridge arm, a first pull-down bridge arm, a second pull-up bridge arm and a second pull-down bridge arm, the parallel detection circuit detects whether PWM signals output by the first detection control circuit and the second detection control circuit are overlapped or not, and when the signals are detected to be overlapped, it is indicated that the current dual-channel gate drive circuit is applied in a dual-channel parallel mode. The parallel detection circuit respectively controls the first detection control circuit and the second detection control circuit to increase the dead time with the preset size, so that up-and-down straight-through of double channels of the double-channel gate drive circuit is avoided, and the drive reliability is improved.

Description

Technical field [0001] The present invention belongs to the field of switching driving technology, and more particularly to a dual-channel gate driving circuit and a dual channel gate drive chip. Background technique [0002] In the half-bridge / full bridge converter and power factor correction circuitry, the dual-channel gate drive circuit or the chip can meet the system's control timing requirements to meet the control timing requirements of the system. When the driven MOSFET gate capacitance is relatively large, a larger drive current requires a quick drive of the gate, and the two channels even more in parallel together in the actual application. [0003] When the dual-channel gate drive circuit or the chip is connected in parallel, the input and output are shorted together to achieve simultaneous control. Since there is a difference between the two channels and the shutdown threshold, the presence of PCB and package parasitic inductance can also cause the same input signal ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/088H02M1/38
CPCH02M1/088H02M1/38
Inventor 胡志成刘之炜盛琳东伟
Owner 茂睿芯(深圳)科技有限公司
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