Reaction chamber of chemical vapor deposition device, and chemical vapor deposition device
A technology of chemical vapor deposition and reaction chamber, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problem of large temperature difference at the center point of the wafer tray, and achieve the effect of ensuring temperature uniformity
Pending Publication Date: 2022-02-08
宁波沁圆科技有限公司
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Problems solved by technology
[0005] In view of this, the present invention provides a reaction chamber of a chemical vapor deposition device and a chemical vapor deposition device to solve the problem in the prior art that there is a large temperature difference between the center point of the wafer tray and its surrounding area
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[0033] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings. Here, the exemplary embodiments and descriptions of the present invention are used to explain the present invention, but not to limit the present invention.
[0034] Here, it should be noted that, in order to avoid obscuring the present invention due to unnecessary details, only the structures and / or processing steps that are closely related to the solution according to the present invention are shown in the drawings, while those related to the present invention are omitted. Invent other details that don't really matter.
[0035] It should be emphasized that the term "comprises / comprises / has" when used herein refers to the presence of a feature, element, step or component, but does not exclude the presence or addition of on...
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The invention provides a reaction chamber of a chemical vapor deposition device, and the chemical vapor deposition device. The reaction chamber comprises: a chamber body; a wafer tray positioned in the chamber body, wherein the upper surface of the wafer tray is used for placing a wafer to be processed; a tray supporting shaft located below the wafer tray, wherein the top end of the tray supporting shaft is connected with the wafer tray; a plurality of annular heating elements located below the wafer tray, and surrounding the periphery of the tray supporting shaft; a reflecting disc located below the annular heating elements, wherein a through hole is formed in the position, corresponding to the tray supporting shaft, of the reflecting disc, wherein the tray supporting shaft penetrates through the through hole; and a temperature equalizing component located between the wafer tray and the reflecting disc and comprising a partition plate and a cylindrical side wall, wherein the partition plate is located between the wafer tray and the annular heating element, a through hole is formed in the center of the partition plate, the tray supporting shaft penetrates through the through hole and the cylindrical side wall and extends downwards from the partition plate, and the cylindrical side wall limits the annular heating element located below the partition plate to the interior of the cylindrical side wall.
Description
technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a reaction chamber of a chemical vapor deposition device and the chemical vapor deposition device. Background technique [0002] Some processes in the manufacturing process of semiconductor devices need to carry the wafer on the wafer tray to complete. For example, chemical vapor deposition CVD (Chemical Vapor Deposition) is gradually used in the manufacture of high-brightness LED chips and power electronic devices due to its advantages of easy growth control, high-purity materials, and large-area epitaxial layer uniformity. In the chemical vapor deposition chamber, in order to decompose the raw material gas so as to be deposited on the wafer surface on the wafer tray, there is also a heating element in the chamber. [0003] In order to ensure the stability of the wafer process results in the existing chemical vapor deposition system, the tray needs to rotate at...
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Login to View More IPC IPC(8): C23C16/458C23C16/46C23C16/54
CPCC23C16/4581C23C16/46C23C16/54Y02P70/50
Inventor 张森王祥费磊
Owner 宁波沁圆科技有限公司