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An atomic layer deposition apparatus

A technology of atomic layer deposition and equipment, applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., can solve the problems of atomic layer deposition equipment deterioration and achieve the effect of preventing the formation of cold spots

Pending Publication Date: 2022-02-08
青岛四方思锐智能技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Liquid condensate degrades the ALD process and ALD equipment

Method used

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  • An atomic layer deposition apparatus
  • An atomic layer deposition apparatus
  • An atomic layer deposition apparatus

Examples

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Embodiment Construction

[0025] figure 1 An embodiment of the device according to the invention is shown, in which embodiment the vacuum chamber 20 is arranged between the first side compartment 30 and the second side compartment 40 above the lower compartment 10 . as from figure 1 It can be seen that the vacuum chamber 20 and the first side compartment 30 are connected together such that there is a first conductive connection 300 from the first side compartment 30 to the vacuum chamber 20 . In addition, the vacuum chamber 20 and the second side compartment 40 on the opposite side of the vacuum chamber 20 to the first side compartment 30 are connected together so that there is a second lead from the second side compartment 40 to the vacuum chamber 20. Connector 400. The second conductive connection 400 is on the opposite side of the vacuum chamber 20 to the first conductive connection 300 . Furthermore, the vacuum chamber 20 and the lower compartment 10 are connected together such that there is at ...

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Abstract

The invention relates to an atomic layer deposition apparatus (1) comprising a vacuum chamber (20), a deposition chamber (2) within the vacuum chamber (20), an inlet channel (5) extending from outside of the vacuum chamber (20) to the deposition chamber (2) such that the inlet channel (5) is connected to the deposition chamber (2) for supplying gases to the deposition chamber (2), a discharge channel (6) extending from the deposition chamber (2) to outside of the vacuum chamber (2) for discharging gases from the deposition chamber (2), one or more first precursor supply sources (3) connected to the inlet channel (5), and one or more second precursor supply sources (4, 4') connected to the inlet channel (5). The vacuum chamber (20) is arranged between the one or more first precursor supply sources (3) and the one or more second precursor supply sources (4).

Description

technical field [0001] The present invention relates to an atomic layer deposition apparatus, and more particularly to an atomic layer deposition apparatus as described in the preamble of independent claim 1 . Background technique [0002] Atomic layer deposition methods typically utilize precursor materials with low vapor pressures. Typically, such materials are solid precursor materials. However, some liquid precursors can also be considered as low vapor pressure materials. During the atomic layer deposition method, the precursors are supplied in gaseous phase to the deposition chamber of the atomic layer deposition apparatus. Thus, a solid or liquid precursor material is vaporized and fed as a gas into the deposition chamber to subject the surface of the substrate to the precursor material. In order to supply these low vapor pressure precursors to the deposition chamber in sufficient quantities and at a sufficiently good operating or dosing rate, the precursor material...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/52
CPCC23C16/45544C23C16/45561C23C16/4412C23C16/448C23C16/45527
Inventor V·米库莱宁H·阿米诺夫P·索恩宁P·J·索恩宁
Owner 青岛四方思锐智能技术有限公司