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A method for measuring the planar Hall resistance of ferrimagnetic perpendicularly anisotropic thin films

A technology of perpendicular anisotropy and planar Hall resistance, applied in the direction of measuring resistance/reactance/impedance, measuring magnetic variables, measuring electric variables, etc., can solve problems such as no longer applicable, achieve wide application range, simple measurement method, Analytical methods for the effectiveness of science

Active Publication Date: 2022-04-19
ZHEJIANG LAB
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when characterizing ferrimagnetic materials with large perpendicular magnetic anisotropy, especially the R PHE , the above method will no longer apply

Method used

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  • A method for measuring the planar Hall resistance of ferrimagnetic perpendicularly anisotropic thin films
  • A method for measuring the planar Hall resistance of ferrimagnetic perpendicularly anisotropic thin films
  • A method for measuring the planar Hall resistance of ferrimagnetic perpendicularly anisotropic thin films

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Measure and analyze Pt / [Co / Tb] 2 The planar Hall resistance of the perpendicular anisotropic multilayer film at T=20K, the steps are as follows:

[0038] (1) Pt / [Co / Tb] 2 The Hall bar device of the vertical anisotropic multilayer film is placed in PPMS, the temperature is lowered to 20K, and then a sufficiently large magnetic field is applied (the inclination angle of the external magnetic field away from the x-y plane of the sample is θ tilted ~3°), let the net magnetic moment saturate positively (+M z );

[0039] (2) Apply an external magnetic field with a size of 0.1T, and set the angle between the external magnetic field and the longitudinal direction of the Hall bar device The initial value is adjusted to 0°, and a current of 1mA is passed into the longitudinal direction of the Hall bar device, which changes continuously within the range of 0-360° (the step size is 10°), so that the external magnetic field turns an angle on the x-y plane of the Hall bar devic...

Embodiment 2

[0047] Measure and analyze Pt / [Co / Tb] 2 The planar Hall resistance of the perpendicular anisotropic multilayer film near the magnetic moment compensation temperature, that is, T=160 K, the steps are as follows:

[0048] (1) After completing Example 1, apply a sufficiently large magnetic field when T=20 K (the inclination angle of the external magnetic field deviating from the x-y plane of the sample is θ tilted ~3°), let the net magnetic moment saturate positively (+M z ), and then raise the temperature to 160 K;

[0049] (2) Apply an external magnetic field of 0.1 T, and set the angle between the external magnetic field and the longitudinal direction of the Hall bar device The initial value is adjusted to 0°, and a current of 1 mA is passed into the longitudinal direction of the Hall bar device, which changes continuously within the range of 0-360° (the step size is 10°), so that the external magnetic field turns an angle on the x-y plane of the Hall bar device, and meas...

Embodiment 3

[0057] Measure and analyze Pt / [Co / Tb] 2 The perpendicular anisotropic multilayer film is far away from the magnetic moment compensation temperature, that is, the planar Hall resistance when T=300K, the steps are as follows:

[0058] (1) After completing Example 2, the temperature is raised to 300K, and then a sufficiently large magnetic field is applied (the inclination angle of the external magnetic field deviating from the x-y plane of the sample is θ tilted ~3°), let the net magnetic moment saturate positively (+M z );

[0059] (2) Apply an external magnetic field with a size of 0.1T, and set the angle between the external magnetic field and the longitudinal direction of the Hall bar device The initial value is adjusted to 0°, and a current of 1mA is passed into the longitudinal direction of the Hall bar device, which changes continuously within the range of 0-360° (the step size is 10°), so that the external magnetic field turns an angle on the x-y plane of the Hall ba...

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Abstract

The invention relates to the technical field of magnetic material and magnetoelectric transport measurement, in particular to a method for measuring the planar Hall resistance of a ferrimagnetic perpendicular anisotropic thin film. Compared with characterizing the planar Hall resistance of magnetic materials through traditional electrical transport measurement methods, the invention removes the influence of abnormal Hall resistance on the measurement of planar Hall resistance of ferrimagnetic perpendicular anisotropic thin films. This method can accurately obtain the planar Hall resistance of the ferrimagnetic perpendicular anisotropic film near the magnetic moment compensation temperature (or magnetic moment compensation point), which is useful for the development of magnetic sensors and magnetic random devices based on the ferrimagnetic planar Hall effect. Storage provides technical support. In addition, this method provides a rich probing and analysis method for studying the complex electrical transport properties of ferrimagnetic materials.

Description

technical field [0001] The invention belongs to the technical field of magnetic material and magnetoelectric transport measurement, and in particular relates to a method for measuring the plane Hall resistance of a ferrimagnetic perpendicular anisotropic thin film. Background technique [0002] The planar Hall effect is an intrinsic spin transport characteristic of magnetic materials. It is specifically manifested as: when a current is passed along the x-direction and the magnetic moment rotates in the x-y plane, a voltage (V xy ), and V xy and the angle between the current and the external magnetic field Satisfy the trigonometric function relation. The planar Hall effect is similar to anisotropic magnetoresistance, and they have the same physical mechanism: the spin-orbit coupling effect of magnetic materials causes electron scattering to exhibit anisotropy. [0003] The planar Hall effect of magnetic materials can be applied to the design of devices such as magnetic se...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R27/08G01R33/12
CPCG01R27/08G01R33/1253
Inventor 陈焕坚
Owner ZHEJIANG LAB
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