Method for detecting molecular pollutants in air and method for forming copper interconnection structure

Abstract

The invention provides a method for detecting molecular pollutants in air in a clean room, which comprises the following steps: providing at least one detection substrate, and forming a sensitive layer on the surface of the detection substrate, the sensitive layer comprising a metal copper layer; placing the detection substrate in the clean room for a preset time, and obtaining defect data of the detection substrate, wherein the defect data are data of defects formed by molecular pollutants in the air of the clean room in the sensitive layer; and comparing whether the defect data of the detection substrate is smaller than a preset defect value of the clean room, and if so, determining that the molecular pollutant concentration in the air of the clean room is normal. According to the method, the molecular pollutants in the air and the sensitive layer are utilized to form defects, then the defect data of the detection substrate are obtained and compared with the preset defect value, and if the defect data of the detection substrate is smaller than the preset defect value, it is judged that the concentration of the molecular pollutants in the air of the clean room is normal; therefore, the molecular pollutants in the air in the clean room can be conveniently and timely detected.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for detecting molecular pollutants in the air and a method for forming a copper interconnection structure. Background technique [0002] The clean room (Clean Room) of semiconductor device manufacturing (Fabrication, FAB) has strict control requirements on molecular pollutants (Airborne Molecular Contamination) in the air. Among them, molecular pollutants in the air not only affect the yield of the manufacturing process, but may also pose risks to the health of personnel. [0003] Such as Figure 1a As shown, an opening 11' (Via) for interconnection is formed on the substrate 10' before the copper electroplating (ECP) process, and a thin layer of seed crystal copper layer 20' (Cu seed) is formed in the opening 11', It is used to conduct electricity as a cathode in the copper electroplating process to fill the electroplated copper. If the molecular pollutants in ...

AI Technical Summary

Problems solved by technology

like Figure 1b As shown, when the substrate 10' is covered and filled with electroplated copper 30', a void 31' (Void) will be formed at the corrosion defect 21', thereby affecting the manufacturing process yield or the reliability of the formed device

from above Figure 1a and Figure 1b It can be seen that the defects (such as voids) caused by AMC may be difficult to detect from defect inspection or WAT of subsequent product wafers, even if the defect can be detected in the sorting yield (Sort yield) test , but it may take one month from the copper process to the Sort yield, making it difficult to guarantee the timeliness of detection

On the other hand, since AMC includes multiple components such as molecular acid (MA, Molecular Acid), molecular base (MB), condensable organic pollutants (MC) and dopant (MD), it will lead to direct detection of AMC The detection equipment for the concentration of each component is very expensive, which makes the cost of AMC detection relatively high, and the setting of detection points is not flexible

Images