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Pixel and global shutter image sensor

An image sensor and global shutter technology, applied in the field of radiation sensing, can solve problems such as noise, achieve the effect of improving charge transmission and increasing fill factor

Pending Publication Date: 2022-02-18
GPIXEL NV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

GS pixels in the voltage domain require in-pixel capacitors and suffer from noise

Method used

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  • Pixel and global shutter image sensor
  • Pixel and global shutter image sensor
  • Pixel and global shutter image sensor

Examples

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Embodiment Construction

[0038] The present invention will be described with respect to particular embodiments and with reference to certain drawings but the invention is not limited thereto but only by the claims. Dimensions and relative dimensions do not correspond to actual reductions to practice of the invention.

[0039] Furthermore, the terms first, second, etc. in the description and in the claims are used to distinguish between similar elements and not necessarily to describe an order in time, space, in ranking or in any other way. It is to be understood that the terms so used are interchangeable under appropriate circumstances and that the embodiments of the invention described herein are capable of operation in other sequences than described or illustrated herein.

[0040] Furthermore, the terms top, below, etc. in the description and claims are used for descriptive purposes and not necessarily to describe relative positions. It is to be understood that the terms so used are interchangeable...

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Abstract

A pixel for a global shutter pixel array is provided, which includes a sensing layer and a storage layer. The sensing layer comprises a sensing element adapted to provide charges upon receiving radiation, and a floating diffusion region for receiving charges from the sensing element. The storage layer comprises at least one storage node for receiving charges from the floating diffusion region of the sensing layer and for storing the charges. The sensing layer and storage layer form a stack of layers, the sensing layer covering at least the storage node of the storage layer and the stack further comprising a light shield at least between the sensing layer and the storage node of the storage layer so the storage node is shielded from impinging radiation. The storage node is between two transfer gates. The storage node and its surrounding gates are provided between the first floating diffusion region and a second floating diffusion region.

Description

technical field [0001] The invention relates to the field of radiation sensing. In particular, the invention relates to active pixels and image sensors with global shutter functionality. Background technique [0002] Digital imaging uses sensing elements that generate charge carriers upon exposure to light. The manipulation of charges and the generation of output signals based thereon can be carried out in different ways, depending, for example, on the type of electronics and sensing elements used. For example, a global shutter (GS) mode is closer to traditional photography in the sense that all pixels simultaneously receive information to form an image. Global shutters are usually provided in charge-coupled devices (CCDs) in an easy and simple implementation. However, CCDs have drawbacks and are less commercially viable. Different types of sensors are preferred for many applications, such as active pixel sensors based on CMOS technology. Active pixel sensors are cheape...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/374H01L27/146
CPCH01L27/14609H01L27/14643H04N25/76H01L27/1464H04N25/709H04N25/771H04N25/79H04N25/616H04N25/532H01L27/14623H01L27/14636H04N25/53
Inventor J·博格茨
Owner GPIXEL NV
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