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Plasma processing apparatus

A processing device and plasma technology, which is applied in semiconductor/solid-state device manufacturing, discharge tubes, electrical components, etc., can solve the problems of radio frequency loss, affecting the uniformity of substrate etching, and unbalanced radio frequency environment inside the vacuum reaction chamber. Increase stability, improve etching non-uniformity, and simplify the effect of workload

Pending Publication Date: 2022-02-22
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the internal components of the plasma processing device are complex and diverse, and there are many internal metal components, and the radio frequency energy is easily exported along the conductive path, which causes the loss of radio frequency in the etching reaction area, resulting in an unbalanced radio frequency environment inside the vacuum reaction chamber. Affects the uniformity of substrate etching

Method used

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  • Plasma processing apparatus
  • Plasma processing apparatus
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Embodiment 1

[0044] In this embodiment, the plasma processing device is a capacitively coupled plasma processing device (Capacitively Coupled Plasma Processing Unit, CCP).

[0045] Such as figure 1 and figure 2As shown, it is a capacitively coupled plasma processing device in this embodiment, the lower electrode assembly 110 also includes a base (not shown in the figure), and the base is located in the vacuum reaction chamber 100 The inner bottom, the electrostatic chuck 111 is located on the base. In the plasma processing apparatus, RF power is applied to the lower electrode assembly 110 by the RF power supply, and a plasma environment is formed between the upper electrode assembly 120 and the lower electrode assembly 110 through capacitive coupling for etching.

[0046] Such as figure 1 As shown, the plasma processing device further includes a plasma confinement device 130, the plasma confinement device 130 is arranged around the outer side of the lower electrode assembly 110, which ...

Embodiment 2

[0066] Please refer to Figure 5 , based on the structural characteristics of the plasma processing device in Embodiment 1, this embodiment makes further changes to the structure of the insulating support rod 260 and the mechanical fastening device 280, mainly for the rod end 262 of the insulating support rod 260 and The structure of split nut 281 is changed.

[0067]In this embodiment, both the connecting bridge 270 and the grounding ring 240 are provided with counterbore holes, the insulating support rod 260 includes a rod middle part 261 and two rod end parts 262, and the diameter of the rod middle part 261 is larger than the The diameter of the counterbore is mentioned above, the rod end 262 has a multi-step structure, and the two rod ends 262 are located at both ends of the rod middle part 261 . Specifically, the rod end 262 includes: a first-stage stepped rod 263 and a second-stage stepped rod 264 . The first-level stepped rod 263 is connected to the middle part 261 of...

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PUM

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Abstract

The invention discloses a plasma processing apparatus. The apparatus comprises: a vacuum reaction cavity, wherein a base is arranged at the bottom in the vacuum reaction cavity; an electrostatic chuck which is positioned on the base, comprises a bearing surface and is used for bearing a substrate to be processed; a grounding ring arranged below the electrostatic chuck so as to support the electrostatic chuck; and a driving unit connected with the grounding ring to drive the grounding ring to move up and down so as to drive the electrostatic chuck to move up and down. The driving unit comprises: a plurality of driving devices used for providing driving force, wherein each driving device is connected with a connecting bridge; and a plurality of insulating supporting rods, wherein one end of each insulating supporting rod is connected with the grounding ring, and the other end of each insulating supporting rod is connected with the connecting bridge. The apparatus has the advantages that the driving devices and the insulating supporting rods are combined, the driving devices and the insulating supporting rods are adopted to drive the grounding ring to ascend and descend, then the electrostatic chuck is driven to move up and down, and the problems of radio frequency loss and uneven etching caused by the fact that radio frequency current is led out along lines of the grounding ring and the insulating supporting rod are avoided.

Description

technical field [0001] The invention relates to the field of semiconductor equipment, in particular to a plasma processing device. Background technique [0002] The plasma processing device uses the working principle of the vacuum reaction chamber to process semiconductor substrates (wafers) and plasma flat substrates. The working principle of the vacuum reaction chamber is to pass an appropriate reaction gas into the vacuum reaction chamber, and then input radio frequency energy into the vacuum reaction chamber to activate the reaction gas to ignite and maintain the plasma, so as to etch the substrate respectively The layer of material on the surface or the layer of material deposited on the surface of the substrate, and then the semiconductor substrate and the plasma panel are processed. [0003] During plasma etching of semiconductor substrates, it is generally desired to confine plasma and radio frequency energy to a limited etching reaction area. However, the internal...

Claims

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Application Information

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IPC IPC(8): H01J37/32H01L21/67
CPCH01J37/32082H01J37/32623H01L21/67069H01J2237/3343
Inventor 傅时梁黄允文
Owner ADVANCED MICRO FAB EQUIP INC CHINA