Semiconductor device including bond pad metal layer structure
A bonding pad, semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems that mechanical parameters cannot be freely adjusted, and the power cycle capability of semiconductor devices is limited by bonding and connection.
Pending Publication Date: 2022-02-22
INFINEON TECH AG
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Problems solved by technology
[0004] Power cycling capabilities of semiconductor devices can be limited by metal pad / wire bond connections
For example, mechanical parameters (such as stiffness) of pads and wiring cannot be adjusted freely and there is a limit to the maximum energy applied to the system to ensure a robust interconnection
Method used
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[0013] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of illustrations specific embodiments in which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. For example, features illustrated or described with respect to one embodiment can be used on or in conjunction with other embodiments to yield still a further embodiment. It is intended that the present invention includes such modifications and variations. The examples have been described using specific language which should not be construed as limiting the scope of the appending claims. The drawings are not to scale and are for illustrative purposes only. For the sake of clarity, identical elements have been designated by corresponding reference numerals in the different figures, if no...
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Abstract
A semiconductor device including a bond pad metal layer structure is disclosed. A semiconductor device (100) is presented. A semiconductor device (100) includes a wiring metal layer structure (102). The semiconductor device (100) further includes a dielectric layer structure (104) disposed directly on the wiring metal layer structure (102). The semiconductor device (100) further includes a bond pad metal layer structure (106) disposed at least partially directly on the dielectric layer structure (104). The layer thickness (td) of the dielectric layer structure (104) is in the range of 1% to 30% of the layer thickness (tw) of the wiring metal layer structure (102). The wiring metal layer structure (102) and the bond pad metal structure (106) are electrically connected through an opening (108) in the dielectric layer structure (104).
Description
technical field [0001] The present disclosure relates to a semiconductor device, and in particular to a semiconductor device including a bonding pad metal layer structure. Background technique [0002] Semiconductor device technology aims at better efficiency and higher reliability requirements for products including power semiconductor devices such as chips including insulated gate bipolar transistors (IGBTs) or diodes. Semiconductor devices such as modules or molded packages should achieve even higher current densities and lower resistances while shrinking in size. Scaling of semiconductor devices is accompanied by an increase in bonding pin density. Wire bonding may be limited in current density due to a combination of material heating and thermal expansion of the wire bonding material used, such as aluminum (Al). [0003] Power cycling and temperature cycling are common thermally accelerated tests used in evaluating the reliability of semiconductor devices. A power cy...
Claims
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IPC IPC(8): H01L23/488H01L21/60
CPCH01L24/05H01L24/03H01L2224/05005H01L2224/05017H01L2224/05024H01L2224/05124H01L2224/05147H01L2224/04042H01L2224/48463H01L2224/45124H01L24/45H01L2224/85205H01L2924/13091H01L2924/13055H01L2224/4911H01L24/49H01L24/48H01L2224/05572H01L2224/05568H01L2224/05027H01L2224/05018H01L2224/05559H01L24/85H01L2224/05647H01L2224/05186H01L2224/05138H01L2224/05638H01L2224/05624H01L2924/00014H01L2924/00H01L2924/0132H01L2924/01014H01L2924/01013H01L2924/059H01L2924/05042H01L2924/05442H01L2924/053H01L2924/0133H01L2924/01029H01L2924/049H01L2924/00015H01L2924/01201H01L23/485H01L23/53219H01L23/53233
Inventor E·纳佩茨尼格J·布兰登堡C·埃尔伯特J·赫希勒O·亨贝尔T·鲁普C·谢弗尔J·紫昌
Owner INFINEON TECH AG