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Polycrystalline silicon reduction furnace

A reduction furnace and polysilicon technology, applied in the direction of silicon compounds, inorganic chemistry, non-metallic elements, etc., can solve the problems affecting the verticality of silicon rods, uneven distribution, and inverted silicon rods, so as to ensure verticality and uniformity, Uniform distribution, guaranteed quality effect

Active Publication Date: 2022-03-01
ASIA SILICON QINGHAI +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The relatively fixed flow path (intake air goes upward along the middle, and discharges downward along the head, furnace wall, and chassis) and high flow rate make the distribution of flow field, temperature field, and radiation field in the furnace uneven, affecting the verticality of silicon rods. It even leads to the phenomenon of inverted rods and large ends of silicon rods

Method used

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  • Polycrystalline silicon reduction furnace
  • Polycrystalline silicon reduction furnace
  • Polycrystalline silicon reduction furnace

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Embodiment

[0044] See figure 1 and figure 2 The present invention discloses a polysilicon further furnace that includes a furnace body 110 and a nozzle 120. An intake port 113 and an air outlet 114 are provided on the furnace body 110, and the nozzle 120 is mounted at the inlet 113, and the nozzle 120 is provided with an opening 1235, and the gas can be entered into the furnace body 110 along the opening 1235. The direction of the nozzle 120 on the opening 1235 can be adjusted according to the shape and size of the silicon bar 110, thereby ensuring the verticality and uniformity of the silicon rod.

[0045]The polysilicon reducing furnace of the present embodiment can be adjusted to the nozzle 120 as needed, thereby changing the orientation and diameter of the opening 1235, obtaining different applications such as the region melt, cutting materials. The front stage can adjust the nozzle 120 to increase the bottom growth rate of the fine silicon core, avoiding the silicon core to generate sha...

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Abstract

The invention discloses a polycrystalline silicon reduction furnace, which belongs to the technical field of polycrystalline silicon production and comprises a furnace body and a nozzle. The nozzle is installed at the bottom of the furnace body, and gas can enter the furnace body along the nozzle. The orientation of the opening on the nozzle can be adjusted according to the shape and the size of the silicon rod in the furnace body, so that the perpendicularity and the uniformity of the silicon rod are ensured. According to the polycrystalline silicon reduction furnace disclosed by the invention, the nozzle can be adjusted in real time as required, so that the direction and the diameter of the opening are changed, and products with different purposes, such as zone melting materials and cutting materials, are obtained. The nozzle can be adjusted in the earlier stage to accelerate the growth speed of the bottom of the thin silicon core, and the silicon core is prevented from shaking and leaning against the wall due to airflow influence; and in the middle and later periods, the nozzles can be adjusted to uniformly distribute a flow field, a temperature field and a radiation field in the furnace, large-head materials are prevented from being generated, the perpendicularity and uniformity of silicon rods are ensured, and the quality of the silicon rods is improved. In addition, the control system can adjust in time when sensing abnormal conditions such as atomization in the furnace, so that the quality of the silicon rod is ensured.

Description

Technical field [0001] The present invention relates to the field of polysilicon production techniques, and in particular, a polysilicon is also ingenu. Background technique [0002] At present, the original furnace electrode is generally in a honeycomb or concentric circle on the chassis, and a plurality of separate material intake ports are adjacent to electrodes on the chassis, and silicon-containing materials and reduction gases enter the reduction furnace in a higher flow rate. The top of the reducing furnace is taken along the blast wall, the chassis return, and the exhaust gas exit is discharged. Relatively fixed flow path (in the middle of the intake, discharge downward along the head, the furnace wall, the chassis) and the high flow rate make the inner flow field, the temperature field, the radiation field distribution uneven, affecting the verticality of the silicon rod, Even causing the silicon bars to appear, big head material. Inventive content [0003] The present ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/035
CPCC01B33/035Y02P20/10
Inventor 鲍守珍杨明财史正斌任长春梁哲曹玲玲宗冰
Owner ASIA SILICON QINGHAI
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