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Plating apparatus and plating method for plating semiconductor wafer

A plating device, semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrolytic components, etc., can solve the problems of limiting conductive features, defective conductive features, and reducing the production yield of IC products.

Pending Publication Date: 2022-03-01
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the copper electroplating process may produce defective conductive features
For example, nanobubbles trapped in the electroplated copper layer will limit the quality of conductive features and thus reduce the production yield of IC products

Method used

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  • Plating apparatus and plating method for plating semiconductor wafer
  • Plating apparatus and plating method for plating semiconductor wafer
  • Plating apparatus and plating method for plating semiconductor wafer

Examples

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Embodiment Construction

[0060] The following disclosure provides many different embodiments, or examples, for implementing different features of the presented subject matter. Specific examples of components and arrangements are set forth below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, in the following description, forming a first feature on or on a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which the first feature is formed in direct contact with the second feature. Embodiments in which an additional feature may be formed between a feature and a second feature such that the first feature and the second feature may not be in direct contact. In addition, the present disclosure may reuse reference numerals and / or letters in various instances. Such re-use is for simplicity and clarity and does not in itself indicate a relatio...

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PUM

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Abstract

A plating apparatus includes a workpiece holder, a plating bath, and a clamp ring. And the plating tank is positioned below the workpiece holder. And the clamping ring is connected with the workpiece holder. The clamp ring includes a channel communicating an inner surface of the clamp ring with an outer surface of the clamp ring.

Description

technical field [0001] Embodiments of the present invention relate to a plating device and a plating method. More specifically, embodiments of the present invention relate to a plating device having a channel in a clamping ring and a plating method using the same. Background technique [0002] Electroplated copper is currently used in the production of advanced semiconductor integrated circuits (ICs) due to its lower resistivity and higher current carrying capacity. However, the copper electroplating process may produce defective conductive features. For example, nanobubbles trapped in electroplated copper layers will limit the quality of conductive features and thus reduce the production yield of IC products. Therefore, one of the ongoing efforts to improve the electrical performance of IC devices is to form defect-free conductive features. Contents of the invention [0003] A coating device includes a workpiece holder, a coating tank and a clamping ring. The plating ...

Claims

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Application Information

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IPC IPC(8): C25D7/12C25D17/06C25D21/04
CPCC25D7/12C25D17/06C25D17/001C25D21/04C25D17/08C25D21/10C25D7/123H01L21/7684H01L21/76898
Inventor 蔡承佑杨固峰邱文智
Owner TAIWAN SEMICON MFG CO LTD
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