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Methods and systems for forming patterned structures using multiple patterning processes

A multi-patterning and patterning technology, used in gaseous chemical plating, coatings, electrical components, etc., can solve problems such as tilt and patterned structure changes

Pending Publication Date: 2022-03-01
エーエスエムアイピーホールディングベーフェー
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although this technique can work relatively well in some applications, once the patterned features are removed, the patterned structure may shift or tilt from a vertical position

Method used

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  • Methods and systems for forming patterned structures using multiple patterning processes
  • Methods and systems for forming patterned structures using multiple patterning processes
  • Methods and systems for forming patterned structures using multiple patterning processes

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Embodiment Construction

[0024] While certain embodiments and examples are disclosed below, it will be understood by those skilled in the art that the invention extends beyond the specifically disclosed embodiments and / or uses of the invention and obvious modifications and equivalents thereof. Therefore, the scope of the disclosed invention should not be limited by the specific disclosed embodiments described below.

[0025] The present disclosure generally relates to methods of forming patterned structures on a substrate surface, device structures including the patterned structures, and systems for performing the methods and / or forming the device structures. As described in more detail below, exemplary methods can be used to form device structures suitable for forming electronic devices. For example, exemplary methods can be used to form patterned structures on a substrate surface. The patterned structure can be used as an etch mask or patterned features for forming the next set of patterned structu...

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Abstract

Methods of forming patterned structures suitable for multiple patterning processes are disclosed. An exemplary method includes forming a layer overlying a substrate by providing a precursor to a reaction chamber for a precursor pulse period, providing a reactant to the reaction chamber for a reactant pulse period, applying a first plasma power having a first frequency (e.g., less than 1 MHz) within a first plasma power period, and optionally applying a second plasma power having a second frequency (e.g., less than 1 MHz) within a second plasma power period. A second plasma power having a second frequency is applied within a second plasma power period, wherein the first frequency is different from the second frequency.

Description

technical field [0001] The present disclosure generally relates to methods and systems for forming patterned structures on substrate surfaces. More specifically, examples of the present disclosure relate to methods and systems that can be used to form patterned structures suitable for multiple patterning processes. Background technique [0002] During the fabrication of electronic devices, fine patterns of features can be formed on a substrate surface by patterning the substrate surface and removing material from the substrate surface using processes such as wet etching and / or dry etching. Photoresists are commonly used for this patterning of the substrate surface. [0003] A photoresist pattern can be formed by coating a layer of photoresist on a substrate surface, masking the surface of the photoresist, and exposing the unmasked portions of the photoresist to radiation, such as UV light or an electron beam, and removes a portion of the photoresist (e.g., the unmasked or ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/32
CPCH01L21/32H01J37/32082H01J37/32449H01L21/02164H01L21/0217H01L21/02274H01L21/0228H01L21/31116H01L21/0337H01L21/0338H01L21/67103C23C16/042C23C16/45542C23C16/52C23C16/345C23C16/401H01L21/0332H01L21/32139H01L21/02123H01L21/02172C23C16/4554H01J37/32174H01J2237/332C23C16/45536H01L21/02142
Inventor 井上尚树中野竜山田信哉土屋真央
Owner エーエスエムアイピーホールディングベーフェー