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Light emitting diode and application thereof

一种发光二极管、电极的技术，应用在半导体器件、电气元件、输送机物件等方向，能够解决光效不好、色散、光不集中等问题，达到光垂直反射能力强化、增加出光效、避免镀膜层裂开的效果

Pending Publication Date: 2022-03-01
GUANGDONG JINGXIANG PHOTOELECTRIC TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The general epitaxial surface has defects in the epitaxy during the crystal growth process, resulting in uneven surface, which will not form a complete mirror surface after the reflector is plated on the back, resulting in dispersion and non-concentration of light. After packaging into white light, lead to poor light effect

Method used

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  • Light emitting diode and application thereof
  • Light emitting diode and application thereof
  • Light emitting diode and application thereof

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Embodiment Construction

[0071]Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0072] see figure 1 , this embodiment proposes a semiconductor device 100, which may be, for example, a chemical vapor deposition device, or a physical vapor deposition device, or a combination of physical vapor deposition device, chemical vapor deposition device, or other semiconductor devices.

[0073] Such as figure 1 As shown, in one embodiment of the present invention, a plurality of chambers are provided in the semiconductor dev...

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Abstract

The invention provides a light emitting diode and application thereof. The light emitting diode comprises a substrate; the semiconductor epitaxial structure is arranged on the substrate; the transparent conducting layer is arranged on the semiconductor epitaxial structure; the first filling and leveling layer is arranged on the transparent conducting layer; the second filling and leveling layer is arranged on the first filling and leveling layer, and the particle density of the first filling and leveling layer is larger than that of the second filling and leveling layer; the first electrode is arranged on the first semiconductor layer of the semiconductor epitaxial structure; and a second electrode disposed on the transparent conductive layer. According to the light-emitting diode provided by the invention, the light-emitting effect can be improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a light emitting diode and its application. Background technique [0002] In the application of the backlight field, light-emitting diodes have the characteristics of power saving, high definition, and fast response time. This new type of product is frequently used in the latest display models. The general epitaxial surface has defects in the epitaxy during the crystal growth process, resulting in uneven surface, which will not form a complete mirror surface after the reflector is plated on the back, resulting in dispersion and non-concentration of light. After packaging into white light, lead to poor light effect. Contents of the invention [0003] In view of the above defects in the prior art, the present invention proposes a light-emitting diode and its application, aiming at improving the problems of light-emitting diode dispersion and non-concentration of light, and further ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/677H01L21/67H01L33/00
CPCH01L21/67781H01L21/67092H01L33/005
Inventor 陈卫军
Owner GUANGDONG JINGXIANG PHOTOELECTRIC TECH CO LTD
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