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Driving control method for parallel connection of double MOS (Metal Oxide Semiconductor) transistors

A MOS tube and drive control technology, which is applied in the field of power switch drive control, can solve the problems of large switching loss, increase switching loss of dual MOS tubes, reduce on-resistance of MOS tubes, etc., and achieve the effect of reducing switching loss.

Pending Publication Date: 2022-03-01
SUZHOU R&D CENT OF NO 214 RES INST OF CHINA NORTH IND GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, two MOS tubes are directly connected in parallel. Although the same drive signal reduces the on-resistance of the MOS tube, it will also bring greater switching loss. Therefore, we propose a new dual MOS tube parallel drive control scheme. It can reduce the on-resistance of MOS tubes without increasing the switching loss caused by the parallel connection of double MOS tubes

Method used

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  • Driving control method for parallel connection of double MOS (Metal Oxide Semiconductor) transistors
  • Driving control method for parallel connection of double MOS (Metal Oxide Semiconductor) transistors
  • Driving control method for parallel connection of double MOS (Metal Oxide Semiconductor) transistors

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Embodiment 1

[0022] Such as figure 1 In the parallel connection structure of double NMOS transistors shown, the introduction of this embodiment is carried out with the CSD18502Q5B model N-channel MOS transistor of TI Company. Both NMOS1 and NMOS2 connected in parallel adopt CSD18502Q5B, and the sources and drains of the two MOS transistors are connected. The gate of the second MOS transistor performs input drive control.

[0023] The driving control method specifically includes:

[0024] First, determine the turn-on time of NMOS1 and the turn-off time of NMOS2. Since the models of the two MOS tubes are the same in this embodiment, the turn-on time and turn-off time are the same. According to the switching characteristics of the CSD18502Q5B product, this embodiment determines the turn-on interval T1 as 10ns, the turn-off interval is 30ns;

[0025] refer to figure 2 As shown, when it is necessary to turn on and drive the double-parallel MOS transistors, the first MOS transistor NMOS1 is...

Embodiment 2

[0030] For the situation of dual P-channel MOS transistors connected in parallel, the drive control method of the present invention also adopts the drive control method of "controlling one of the MOS transistors to be in the fully conducting state of the other MOS transistor when it is turned on and completely turned off" For ideas, the timing coordination of the two drive control signals G1 and G2 can be found in image 3 , is determined according to the breaking characteristics of the PMOS transistors, wherein the turn-on time interval and the conduction time interval of the two MOS transistors are determined according to the breaking characteristics of the specific PMOS transistor model, and will not be described in detail.

[0031] To sum up the above embodiments, the present invention can further reduce the large switching loss caused by the superimposition of voltage and current changes during turn-on and turn-off on the basis of reducing the conduction loss by connecting...

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Abstract

The invention provides a driving control method for parallel connection of double MOS transistors, a parallel connection structure of the double MOS transistors comprises a first MOS transistor and a second MOS transistor, the source electrode and the drain electrode of the first MOS transistor and the drain electrode of the second MOS transistor are connected in parallel, and the grid electrodes of the first MOS transistor and the second MOS transistor receive a first driving control signal and a second driving control signal respectively. The driving control method comprises the following steps: controlling the on and off of a first MOS tube through a first driving control signal, and controlling the on and off of a second MOS tube through a second driving control signal, so that the on time of the second MOS tube is at or after the complete on time of the first MOS tube, the complete off time of the second MOS tube is at or before the off start time of the first MOS tube, and the off time of the second MOS tube is at or before the off start time of the second MOS tube. And the first MOS tube is in a completely-opened state in all time intervals when the second MOS tube is completely opened. According to the driving control method, the switching loss generated by voltage and current change superposition when the MOS tube is turned on and turned off can be effectively reduced.

Description

technical field [0001] The invention relates to the technical field of power switch drive control, in particular to a drive control method for parallel connection of double MOS transistors. Background technique [0002] At present, most switching power supplies use MOS transistors as power switches. For some high-power switching power supplies, two MOS transistors are usually used in parallel to reduce the on-resistance of the MOS transistors and allow larger switching currents to pass. However, two MOS tubes are directly connected in parallel. Although the same drive signal reduces the on-resistance of the MOS tube, it will also bring greater switching loss. Therefore, we propose a new dual MOS tube parallel drive control scheme. It can not only reduce the on-resistance of the MOS transistor, but also not increase the switching loss caused by the parallel connection of the double MOS transistors. Contents of the invention [0003] The purpose of the present invention is ...

Claims

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Application Information

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IPC IPC(8): H02M1/088
CPCH02M1/088
Inventor 吴力涛陈剑钧杨琼楠孙帮东杨翠侠贾丹丹
Owner SUZHOU R&D CENT OF NO 214 RES INST OF CHINA NORTH IND GRP