Microwave plasma reaction cavity and equipment for chemical vapor deposition

Abstract

The invention provides a microwave plasma reaction cavity and equipment for chemical vapor deposition. The microwave plasma reaction cavity comprises a cavity body, a quartz window, a fixed ring, a substrate table assembly, a fixed disc and at least one variable-diameter ring assembly. The variable-diameter ring assembly comprises a variable-diameter ring arranged between the substrate table assembly and the cavity, a length-variable corrugated pipe module arranged on the outer surface of the bottom of the cavity, a transmission rod fixed in the corrugated pipe module in a penetrating mode, a movable disc arranged between the cavity and the fixed disc and fixedly connected with the transmission rod, and a lead screw arranged on the movable disc in a penetrating mode. The transmission rod is fixedly connected with the variable-diameter ring, the lead screw is in threaded fit with the movable disc, and the two ends of the lead screw are movably connected with the bottom of the cavity and the fixed disc respectively. The axial and radial boundaries of the cavity are adjusted through the variable-diameter ring assembly, the purposes of increasing the power density of plasmas above the substrate table in real time, preventing generation of secondary plasmas and improving the temperature uniformity on the substrate table are achieved under the condition that the reaction cavity is not disassembled, and the growth speed and quality of diamonds are improved.

Description

technical field [0001] The invention belongs to the technical field of diamond growth, and in particular relates to a microwave plasma reaction chamber for chemical vapor deposition and equipment including the microwave plasma reaction chamber for chemical vapor deposition. Background technique [0002] This section provides background information related to the present application only and is not necessarily prior art. [0003] Diamond can not only be used as a gemstone with collection value, but also has very high application value. The current methods of artificially synthesizing diamond include DC arc plasma jet method, high temperature and high pressure method, hot wire chemical vapor deposition method, microwave plasma chemical vapor deposition method (MPCVD) and so on. Microwave plasma chemical vapor deposition (MPCVD) has become the preferred method for synthesizing diamond due to a series of advantages such as easy control of microwave excited plasma, high plasma ...

AI Technical Summary

Problems solved by technology

However, in MPCVD equipment, the vacuum of the cavity is a necessary condition. The current technical solution is to disassemble the cavity and adjust the metal structure in the cavity. And assembly also creates uncertain factors for the vacuum tightness of the cavity

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