Semiconductor processing apparatus

A processing device and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of high equipment cost and complicated methods, and achieve the effect of reducing volume

Pending Publication Date: 2022-03-15
WUXI HUAYING MICROELECTRONICS TECH CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The equipment cost of the plasma edge etching method is high, and the method is relatively complicated, and it is mainly used in the process of integrated circuit chips

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor processing apparatus
  • Semiconductor processing apparatus
  • Semiconductor processing apparatus

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0026] Please refer to Figure 2a to Figure 3b , which shows a schematic structural diagram of the semiconductor processing device 100 provided in the first embodiment of the present invention, wherein: Figure 2a It is a schematic cross-sectional view of the semiconductor processing device in the first embodiment of the present invention; Figure 2b for Figure 2a The enlarged schematic diagram of circle A in ; Figure 3a for Figure 2a A bottom view of the first chamber portion of the semiconductor processing apparatus in Figure 3b for Figure 2a A top view of the second chamber section of the semiconductor processing apparatus in .

[0027] Please refer to Figure 2a to Figure 3b , the semiconductor processing apparatus 100 includes a first chamber part 110 and a second chamber part 120 . The first chamber portion 110 includes a first chamber plate 119 and a flange 118 extending from a periphery of the first chamber plate 119 . The second chamber portion 120 includ...

no. 2 example

[0047] Please refer to Figure 4 to Figure 6b , which shows a schematic structural diagram of the semiconductor processing device 200 provided in the second embodiment of the present invention, wherein: Figure 4 It is a schematic cross-sectional view of the semiconductor processing device in the first embodiment of the present invention; Figure 5 for Figure 4 The enlarged schematic diagram of circle B in ; Figure 6a for Figure 4 A bottom view of the first chamber portion of the semiconductor processing apparatus in Figure 6b for Figure 4 A top view of the second chamber section of the semiconductor processing apparatus in .

[0048] The structure of the semiconductor processing device 200 in the second embodiment is mostly the same as that of the semiconductor processing device 100 in the first embodiment, so the same parts are marked with the same marks, and the difference between the two is mainly: semiconductor processing There are some differences in the struc...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a semiconductor processing apparatus. The semiconductor processing apparatus comprises a first chamber part; and a second chamber part. The first cavity part is provided with a first channel, the second cavity part is provided with a second channel, and when the second cavity part is located at a closed position relative to the first cavity part and a semiconductor wafer is accommodated in the microcavity, the first channel and the second channel are communicated and jointly form an edge microprocessing space at the edge of the wafer; the outer edge of the semiconductor wafer accommodated in the microchamber extends into the edge microprocessing space. The first cavity part is provided with a sealing joint part located on the outer side of the first channel, the second cavity part is provided with a joint groove corresponding to the sealing joint part, and by means of the edge micro-processing space, processing of the outer edge of the semiconductor wafer can be achieved.

Description

【Technical field】 [0001] The invention relates to the field of surface treatment of semiconductor wafers or similar workpieces, in particular to semiconductor processing devices. 【Background technique】 [0002] The precise edge etch process of semiconductor wafers is a challenging process. It requires micron-scale precise etching of the wafer edge without damaging or contaminating the remaining film. In the epitaxial wafer manufacturing process and advanced integrated circuit manufacturing process, the wafer edge etching process is an important step to ensure the quality of film formation and improve chip yield. [0003] Please refer to Figure 1a to Figure 1d ,in: Figure 1a A schematic structural view of a semiconductor wafer 400 is shown, Figure 1b for Figure 1a The E-E sectional view of; Figure 1c a partial cross-sectional view of an outer edge of a semiconductor wafer prior to edge processing; Figure 1d is a cross-sectional view of the outer edge portion of th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/687H01L21/67
CPCH01L21/67075H01L21/68785H01L21/68735H01L21/6708H01L21/67092
Inventor 温子瑛
Owner WUXI HUAYING MICROELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap