Integrated circuit, method for manufacturing vertical transistor, and method for manufacturing integrated circuit

Abstract

The invention relates to an integrated circuit, a method for manufacturing a vertical transistor, and a method for manufacturing an integrated circuit. An integrated circuit includes an electronic component. Insulating silica is adjacent to the electronic component. The insulating silica has at least one of (a) and (b), wherein: (a): an average concentration of elemental form H of 0.002 to 0.5 atomic percent; and (b): an average concentration of elemental form N of 0.005 to 0.3 atomic percent. Other embodiments including methods are disclosed.

Description

technical field [0001] Embodiments disclosed herein relate to integrated circuits, methods for fabricating vertical transistors, and methods for fabricating integrated circuits. Background technique [0002] Memory is a type of integrated circuit and is used in computer systems to store data. Memory can be fabricated as one or more arrays of individual memory cells. Memory cells can be written to or accessed using digit lines (which may also be referred to as bit lines, data lines, or sense lines) and access lines (which may also be referred to as word lines, gate lines, or gate lines). read. Digit lines can conductively interconnect the memory cells along the columns of the array, and access lines can conductively interconnect the memory cells along the rows of the array. Each memory cell is uniquely addressable by a combination of digit and access lines. [0003] Memory cells may be volatile, semi-volatile, or non-volatile. Non-volatile memory cells can store data for...

AI Technical Summary

Problems solved by technology

Unfortunately, high temperatures can damage other structures on the wafer (eg, circuit components)

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