Single photon avalanche diode
A single-photon avalanche, diode technology, applied in sustainable manufacturing/processing, climate sustainability, semiconductor devices, etc., can solve problems such as loss, achieve the effect of reducing loss and suppressing timing jitter
Pending Publication Date: 2022-04-05
EGIS TECH
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In this case, photoelectrons are more likely to drift to positions outside the depletion region, resulting in loss of photon detection probability (PDP)
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[0013] Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numerals are used in the drawings and description to refer to the same or like parts.
[0014] figure 1 It is a schematic cross-sectional view of the single-photon avalanche diode 100 according to some embodiments of the present invention. Please refer to figure 1 The single-photon avalanche diode 100 includes a first N-type semiconductor well layer 110 , a second N-type semiconductor well layer 120 and a P-type semiconductor well layer 130 . The second N-type semiconductor well layer 120 is disposed above the first N-type semiconductor well layer 110 . The P-type semiconductor well layer 130 includes a first P-type semiconductor sub-layer 132 , a second P-type semiconductor sub-layer 134 and a P-type semiconductor connection layer 136 . The first N-type semiconductor well la...
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Abstract
The invention provides a single photon avalanche diode. The single photon avalanche diode comprises a first N-type semiconductor well layer, a second N-type semiconductor well layer and a P-type semiconductor well layer, the second N-type semiconductor well layer is disposed above the first N-type semiconductor well layer. The P-type semiconductor well layer comprises a first P-type semiconductor sub-layer, a second P-type semiconductor sub-layer and a P-type semiconductor connection layer. The first P-type semiconductor sub-layer is disposed on the first N-type semiconductor well layer, and the second P-type semiconductor sub-layer is disposed above the first P-type semiconductor sub-layer. The second N-type semiconductor well layer is disposed between the first P-type semiconductor sub-layer and the second P-type semiconductor sub-layer. The P-type semiconductor connection layer connects the first P-type semiconductor sub-layer and the second P-type semiconductor sub-layer. The second N-type semiconductor well layer is connected with the first N-type semiconductor well layer through the lateral opening of the P-type semiconductor well layer.
Description
technical field [0001] The present invention relates to a photodiode, in particular to a single photon avalanche diode (SPAD). Background technique [0002] When a photon strikes a single-photon avalanche diode, the electrons that have absorbed the photon's energy leave the valence band, thereby forming electron-hole pairs in the semiconductor. When the electrons separated from the holes enter the depletion region at the PN junction (p-n junction), the electrons are greatly accelerated by the electric field in the depletion region and hit other atoms, causing other atoms to dissociate more electrons. And the collapse current (avalanche current) is formed. The current value of the collapse current is much larger than the original photocurrent, which can effectively improve the sensing sensitivity. [0003] Single-photon avalanche diodes can be applied to time-of-flight ranging device (ToF ranging device) or light radar (LiDAR), which can calculate the distance of an object ...
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IPC IPC(8): H01L31/107
CPCH01L27/1443H01L27/1446H01L31/107Y02P70/50
Inventor 谢晋安吴劲昌
Owner EGIS TECH