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In-memory data processing circuit and resistive random access memory

A data processing and circuit technology, applied in the electronic field, can solve problems such as low precision, power consumption, and large area overhead, and achieve the effects of high precision, small power consumption, and small area

Pending Publication Date: 2022-04-08
XIAMEN IND TECH RES INST CO LTD
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Problems solved by technology

[0002] In related technologies, the calculation accuracy and energy efficiency of the in-memory computing core are two key indicators in the design. Only the high-precision and high-energy-efficiency in-memory computing core can give full play to the advantages of in-memory computing. The internal computing core needs to use a large number of ADC / DAC and inverting amplifiers, resulting in high power consumption and area overhead, and the non-ideal characteristics of the RRAM array make the accuracy not high

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  • In-memory data processing circuit and resistive random access memory
  • In-memory data processing circuit and resistive random access memory

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Embodiment Construction

[0018] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0019] related technologies, such as figure 1 As shown, the existing N-bit input of the memory calculation core based on the inverting amplifier is first converted into an input voltage through the DAC of the input interface, and the result of the multiplication and accumulation operation is converted into a column current through a multi-bit RRAM cross array, and then through a feedback resistor based on R f The inverting amplifier converts the calculation result into an analog voltage and outputs it through ADC quantization th...

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Abstract

The invention discloses an in-memory data processing circuit, which comprises a voltage regulation unit, a comparison unit and a shift selection unit, and is characterized in that corresponding first voltages are output through the voltage regulation unit according to different gating resistor array branches; comparing the plurality of first voltages output by the voltage regulation unit with the second voltage through a comparison unit so as to output a plurality of level signals; and outputting corresponding bit data according to the plurality of level signals through a shift selection unit, therefore, a large number of ADC / DAC and inverting amplifiers are not needed, so that the power consumption and the area are small, and the precision is high.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to an in-memory data processing circuit and a resistive variable memory. Background technique [0002] In related technologies, the calculation accuracy and energy efficiency of the in-memory computing core are two key indicators in the design. Only the high-precision and high-energy-efficiency in-memory computing core can give full play to the advantages of in-memory computing. Due to the need to use a large number of ADCs / DACs and inverting amplifiers in the internal computing core, the power consumption and area overhead are large, and the non-ideal characteristics of the RRAM array make the accuracy not high. Contents of the invention [0003] The present invention aims to solve one of the technical problems in the above-mentioned technologies at least to a certain extent. Therefore, an object of the present invention is to propose an in-memory data processing circuit wit...

Claims

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Application Information

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IPC IPC(8): G11C13/00
Inventor 黄永宏柯志斌李淡陈瑞隆
Owner XIAMEN IND TECH RES INST CO LTD
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