A switch bootstrap charging circuit suitable for high-speed gate driving of a GaN power device belongs to the technical field of
power management. A
control logic module generates a first
control signal and a second
control signal according to the undervoltage
signal and the low-side gate driving
signal. The gate
electrode of the first PMOS
transistor is connected to the second
control signal, thesource
electrode thereof is connected to the supply
voltage, and the drain
electrode thereof is connected to the source electrode of the first NMOS
transistor. An input end of the first
inverter is connected with a first control
signal, an output end of the first
inverter is connected with an input end of the second
inverter and is connected with a
cathode of the first
diode and a gate electrodeof the second NMOS
transistor through a first
capacitor; The
anode of the first
diode and the source of the second NMOS transistor are connected to a supply
voltage; The gate electrode of the first NMOS transistor is connected to the drain electrode of the second NMOS transistor and is connected to the output end of the second inverter through the second
capacitor, and the drain electrode of the second NMOS transistor serves as the output end of the switch bootstrap charging circuit. The invention can prevent the
voltage on the bootstrap
capacitor from being too large when charging, can realize on-
chip integration, and has a
simple circuit structure and high reliability. It is especially suitable for GaN high-speed gate drive.