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Feeding device and method for multi-feeding Czochralski single crystal process

A feeding device and technology of multiple feeding, applied in the direction of single crystal growth, single crystal growth, polycrystalline material growth, etc., can solve the problem of lowering the quality of single crystal, reduce the wire breakage rate, improve the survival rate of the pilot and release and the whole process. Rod rate effect

Pending Publication Date: 2022-04-12
JIANGSU XIEXIN SILICON MATERIAL TECH DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Based on this, it is necessary to provide a feeding device for the multi-feeding Czochralski single crystal process and a method for adding silicon materials in the multi-feeding Czochralski single crystal process, so as to solve the problem of introducing fine materials when adding silicon materials in the RCZ process. The problem of degraded single crystal quality

Method used

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  • Feeding device and method for multi-feeding Czochralski single crystal process
  • Feeding device and method for multi-feeding Czochralski single crystal process
  • Feeding device and method for multi-feeding Czochralski single crystal process

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Embodiment 1

[0078] This embodiment provides a feeding device for a multi-feeding Czochralski single crystal process. The feeding device has a feeding cylinder, and the feeding cylinder is made of quartz material. The feeding barrel has a feed end and a discharge end oppositely arranged. The side wall of the feeding barrel is provided with a first air hole, the first air hole has an air inlet and an air outlet, the air inlet is located on the outer wall of the feeding barrel, the air outlet is located on the inner wall of the feeding barrel, and the first air hole is used for self-feeding outside the feeding barrel. Gas is blown to the inside of the feeding cylinder, and the gas outlet direction of the gas outlet of the first air hole is biased towards the feed end.

[0079] The first air hole includes a first air channel and a second air channel. The air inlet is located in the first airway, and the air outlet is located in the second airway. The first airway communicates with the seco...

Embodiment 2

[0082] This embodiment provides a feeding device for a multi-feeding Czochralski single crystal process. The feeding device has a feeding cylinder. The feeding cylinder is made of quartz material. The feeding barrel has a feed end and a discharge end oppositely arranged. The side wall of the feeding barrel is provided with a first air hole, the first air hole has an air inlet and an air outlet, the air inlet is located on the outer wall of the feeding barrel, the air outlet is located on the inner wall of the feeding barrel, and the first air hole is used for self-feeding outside the feeding barrel. Gas is blown to the inside of the feeding cylinder, and the gas outlet direction of the gas outlet of the first air hole is biased towards the feed end.

[0083] The first air hole includes a first air channel and a second air channel. The air inlet is located in the first airway, and the air outlet is located in the second airway. The first airway communicates with the second ...

Embodiment 3

[0086] This embodiment provides a feeding device for a multi-feeding Czochralski single crystal process. The feeding device has a feeding cylinder, a jacket structure and a first blowing mechanism, and the feeding cylinder is made of quartz material. The feeding barrel has a feed end and a discharge end oppositely arranged. The side wall of the feeding barrel is provided with a first air hole, the first air hole has an air inlet and an air outlet, the air inlet is located on the outer wall of the feeding barrel, the air outlet is located on the inner wall of the feeding barrel, and the first air hole is used for self-feeding outside the feeding barrel. Gas is blown to the inside of the feeding cylinder, and the gas outlet direction of the gas outlet of the first air hole is biased towards the feed end.

[0087] The first air hole includes a first air channel and a second air channel. The air inlet is located in the first airway, and the air outlet is located in the second ai...

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Abstract

The invention relates to a feeding device and method for a multi-feeding Czochralski single crystal process. The feeding device is provided with a feeding cylinder, the feeding cylinder is provided with a feeding end and a discharging end which are oppositely arranged, a first air hole is formed in the side wall of the feeding cylinder, the first air hole is provided with an air inlet and an air outlet, the first air hole is used for blowing air from the outside of the feeding cylinder to the inside of the feeding cylinder, and the air outlet direction of the air outlet of the first air hole deviates to the feeding end. During feeding, a silicon material is added from the feeding end of the feeding cylinder, and air is blown into the feeding cylinder through the first air holes while the silicon material is added, so that air flow facing the feeding end is formed. The airflow discharges nanoscale or micron-sized fine materials from the feeding end of the feeding cylinder in time, so that the problems that the fine materials enter a single crystal thermal field along with the re-feeding process, the thermal field is polluted, and the quality of crystal bars is reduced are solved. When the feeding device is used for feeding, the leading and releasing survival rate and the whole rod rate can be improved, and the thread breaking rate is reduced.

Description

technical field [0001] The invention relates to the technical field of monocrystalline silicon manufacturing, in particular to a feeding device for a multi-feeding Czochralski single crystal process and a method for adding silicon material in the multi-feeding Czochralski single crystal process. Background technique [0002] At present, in the multi-feeding Czochralski single crystal process (RCZ), a crucible needs to be used for about 400 hours, and about 10 single crystal silicon rods will be produced. After each single crystal silicon rod is produced, it is necessary to re-throw silicon material into the crucible, and then pull the next single crystal silicon rod after the silicon material is melted. The re-introduction process refers to pouring 5-15 bags (10 kg / bag) of silicon material into the feeding cylinder, and putting the silicon material into the crucible in the single crystal furnace through the feeding cylinder. Wherein, the feeding cylinder is generally a quar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/02C30B29/06
Inventor 汪晨张华利周声浪宋亚飞赵玉兵周洁
Owner JIANGSU XIEXIN SILICON MATERIAL TECH DEV
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