The present application relates to the field of aluminum
nitride crystal growth
processing, and particularly relates to a method for reducing
cutting stress of AlN
crystal processing. The method is as follows: a
hollow cylinder as a buffer layer and an AlN
crystal are both adhered to a
metal plate through paraffin; then glue is poured into the
hollow cylinder, so that the glue completely wraps the crystal; after the glue solidifies, the bottom of the
metal plate is heated, the paraffin is melted, and then the
metal plate is detached to obtain a sample to be
cut; the sample is
cut and the edge is trimmed to obtain a regular AlN
wafer. The present application sets a buffer layer outside the AlN crystal to avoid damage of stress to the crystal; when the
cutting line contacts the crystal,
high stress is generated, the buffer layer can gradually release the stress and gradually transfer the stress to the crystal, so that the crystal can be simply and effectively protected, the crystal is prevented from
cracking, and the complete AlN
wafer can be
cut; the buffer layer avoids the direct contact of the
cutting line and the crystal, reduces the probability of cutting line breakage, and enables efficient cutting.