Method for cutting silicon wafer through 55-micrometer diamond wire

Abstract

The invention relates to a method for cutting a silicon wafer through a 55-micrometer diamond wire. The method comprises the following steps that a cutting wire net is arranged in a cutting area between an upper wire wheel and a lower wire wheel, the wire net is in a Z shape, the distance between two wire guide wheels is M, the distance between the upper wire wheel and the lower wire wheel is N, and M is equal to M; tension and running speed of the cutting wire net, and the silicon bar motion speed are set; at the starting processing stage, the tension of the wire net is 8N, the workpiece motion speed is 2.3 to 2.4 mm / min, the diamond wire moving speed is 600m / min, and cooling liquid is prepared; in the continuous machining process, the tension of the wire net ranges from 9 to 10 N, the workpiece motion speed is 2.4 mm / min, and the motion speed of the diamond wire is 1500 m / min; at the finishing stage, the tension of the wire net is 12 N, the workpiece motion speed is 1.0 mm / min, and the diamond wire motion speed is 1300 to 1500 m / min; cooling liquid flow is set, wherein at the starting machining stage, the flow is 50 to 55 kg / min, at the continuous machining stage, the flow is 500kg / min, and at the finishing stage, the flow is 50 to 55 kg / min; and the wire arch of the cutting wire net and cutting strength of the extremely thin wire are matched, and the wire breaking problem is solved.

Description

technical field [0001] The invention relates to the technical field of single crystal silicon processing, in particular to a method for cutting silicon wafers with a 55 μm diamond wire. Background technique [0002] In the field of diamond wire cutting monocrystalline silicon wafer technology, the diameter of the diamond wire is closely related to the cutting efficiency and the quality of the slice, and the use of ultra-thin wires (diameter less than 60 μm) can greatly improve production efficiency and yield, but in the actual production process After the diamond wire becomes thinner, the breaking force it can withstand also decreases, which can easily cause wire breakage during cutting, resulting in damage and waste of silicon wafers. Contents of the invention [0003] The applicant aims at the above-mentioned shortcoming in the existing production technology, provides a kind of method of 55 μm diamond wire cutting silicon wafer, thus under the premise of ensuring cutting...

AI Technical Summary

Problems solved by technology

[0003] The applicant aims at the shortcoming in the above-mentioned existing production technology, provides a kind of method of 55 μm diamond wire cutting silicon wafer, thus under the premise of ensuring cutting efficiency and good product rate, solves the technical problem of diamond wire breakage, silicon wafer breakage