The invention relates to a method for
cutting a
silicon wafer through a 55-
micrometer diamond wire. The method comprises the following steps that a
cutting wire net is arranged in a
cutting area between an upper
wire wheel and a lower
wire wheel, the wire net is in a Z shape, the distance between two wire guide wheels is M, the distance between the upper
wire wheel and the lower wire wheel is N, and M is equal to M; tension and running speed of the cutting wire net, and the
silicon bar motion speed are set; at the starting
processing stage, the tension of the wire net is 8N, the workpiece motion speed is 2.3 to 2.4 mm / min, the
diamond wire
moving speed is 600m / min, and cooling liquid is prepared; in the continuous
machining process, the tension of the wire net ranges from 9 to 10 N, the workpiece motion speed is 2.4 mm / min, and the motion speed of the
diamond wire is 1500 m / min; at the finishing stage, the tension of the wire net is 12 N, the workpiece motion speed is 1.0 mm / min, and the diamond wire motion speed is 1300 to 1500 m / min; cooling liquid flow is set, wherein at the starting
machining stage, the flow is 50 to 55 kg / min, at the continuous
machining stage, the flow is 500kg / min, and at the finishing stage, the flow is 50 to 55 kg / min; and the wire arch of the cutting wire net and cutting strength of the extremely
thin wire are matched, and the wire breaking problem is solved.