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Diamond-wire slicing method for sapphire sheets

A diamond wire cutting and sapphire technology, which is applied in the petroleum industry, stone processing equipment, fine working devices, etc., can solve the problems of high economic cost, difficult application and promotion, and high brittleness of sapphire flakes

Inactive Publication Date: 2014-03-19
ZHEJIANG SHANGCHENG SCI&TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, processing artificially grown sapphire into larger-diameter panels requires a huge economic cost, making it difficult to be widely used and popularized. At the same time, sapphire flakes are highly brittle and have low impact resistance, which also limits their scope of use.
[0004] In the prior art, there is a lack of a mature diamond wire cutting method for sapphire thin slices. The existing diamond wire cutting method is used for sapphire cutting. Sapphire flakes

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Stick the sapphire crystal block to the surface of the workpiece with the centerline of C-axis and M-axis as the bottom surface, and the cut surface is A-plane.

[0023] Diameter of diamond wire: 0.25mm, diamond particle size of diamond wire: 30-40μm.

[0024] Sharpen the unsharpened diamond wire cutting waste crystal ingot.

[0025] Processing parameters: tension: 35N, line speed: 12m / s, workpiece feed: 0.25mm / min, cutting fluid flow: 350ml / s, cutting fluid temperature: 25°C, workpiece swing angle: 5°, workpiece swing frequency: 28cir / min.

[0026] According to the sapphire diamond wire cutting process of this embodiment, the first pass rate of the sapphire sheet is 97%, the flatness is 10 μm, the warpage is 10 μm, and the thickness tolerance is 12 μm.

[0027] The beneficial effect of the invention is that large-size sapphire touch panel rough products can be prepared, the process shortens the processing time of sapphire slices, improves production quality and redu...

Embodiment 2

[0029] Different from embodiment 1, the processing parameters of the present embodiment:

[0030] Tension: 35N, line speed: 9.6m / s, workpiece feed: 0.2mm / min, cutting fluid flow: 350ml / s, cutting fluid temperature: 35°C, workpiece swing angle: 2°, workpiece swing frequency: 15cir / min .

Embodiment 3

[0032] Different from embodiment 1, the processing parameters of the present embodiment:

[0033] Tension: 35N, line speed: 12m / s, workpiece feed: 0.25mm / min, cutting fluid flow: 350ml / s, cutting fluid temperature: 35°C, workpiece swing angle: 10°, workpiece swing frequency: 40cir / min.

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Abstract

The invention provides a diamond-wire slicing method for sapphire sheets. A sapphire crystal is stuck on the workpiece surface with the C-axis or M-axis center line as the bottom face, and the cut plane is the A-plane; cutting the sapphire crystal with the diamond wire to obtain sapphire sheets, wherein the diamond wire diameter is 0.25mm, and the diamond particle size is 30 microns to 40 microns, the wire tension is 35N, the wire speed is 12m / s, the workpiece feeding speed is 0.25 mm / min, and the cutting liquid flow is 350 ml / s. The diamond-wire slicing method is used for mobile phone panels, certain adhesive is required to stick crystal bars on a workpiece clamp capable of being fixed on a slicer according to the specific crystal orientation, the high rotation speed of a wire roller is used for driving the diamond wire to perform high-speed moving cutting from specific lattice planes.

Description

technical field [0001] The invention relates to a diamond wire slicing method for sapphire thin slices. Background technique [0002] The composition of sapphire is aluminum oxide (Al2O3), which is composed of three oxygen atoms and two aluminum atoms combined by covalent bonds. Its crystal structure is a hexagonal lattice structure. It is often used in A-Plane, C-Plane and R-Plane. Due to the wide optical penetration band of sapphire, it has good light transmission from near ultraviolet (190nm) to mid-infrared. Therefore, it is widely used in optical components, infrared devices, high-intensity As for laser lens material and mask material, it has the characteristics of high sound velocity, high temperature resistance, corrosion resistance, high hardness, high light transmittance, high melting point (2045°C), etc. It is a very difficult material to process. [0003] Artificially grown sapphire has good wear resistance, and its hardness is second only to diamond, reaching Mo...

Claims

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Application Information

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IPC IPC(8): B28D5/04C10M173/02C10N40/22
Inventor 吴云才
Owner ZHEJIANG SHANGCHENG SCI&TECH
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