Epitaxial structure of a uvb chip and its application
An epitaxial structure and chip technology, which is applied in nanotechnology for materials and surface science, semiconductor devices, electrical components, etc., can solve problems such as fast decay of luminous intensity, low luminous efficiency, and short UVB lifespan.
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[0065] In the present invention, the preparation method of the epitaxial structure preferably includes the following steps:
[0066] An AlInGaN base layer, an undoped AlInGaN layer, an N-type AlInGaN layer, an AlInGaN electron buffer layer, an AlInGaN quantum light-emitting layer, an AlInGaN electron blocking layer, a P-type AlInGaN transport layer, and a P-type contact layer are grown on the upper surface of the substrate in sequence to obtain the epitaxial structure.
[0067] Before the epitaxial structure is grown on the upper surface of the substrate, the substrate is preferably pretreated, and the pretreatment includes baking and cleaning in sequence; in the present invention, the baking is preferably performed after the The substrate is placed in a reactor and baked at 1050° C. in a hydrogen atmosphere. The present invention does not have any special limitation on the cleaning process. It is performed by a process well known to those skilled in the art and can remove the...
Embodiment 1
[0073] according to image 3 As shown in the process, the sapphire substrate is put into the MOCVD equipment, hydrogen is introduced, and after baking at 1050 °C, the oxides and impurities on the surface of the sapphire substrate are cleaned;
[0074] At a temperature of 1300 °C, AlN layers (3 μm in thickness) were sequentially grown on the surface of the cleaned sapphire substrate, and undoped Al was grown. 0.65 Ga 0.35 N layer (thickness 1 μm), growing N-type doped Al 0.65 Ga 0.35 N layer (thickness is 0.5 μm, N-type Si doping concentration is 8×10 18 cm -3 ), growing N-type doped Al 0.5 Ga 0.5 N layer (thickness is 0.5 μm, N-type Si doping concentration is 1.5×10 19cm -3 ), growing Al 0.15 In 0.01 Ga 0.84 N / Al 0.7 In 0.01 Ga 0.29 N superlattice layer electron buffer layer, the period number of the superlattice is 20, Al 0.15 In 0.01 Ga 0.84 N layer and Al 0.7 In 0.01 Ga 0.29 The thickness of the N layer is all 0.5 nm, and Al is grown 0.5 In 0.01 Ga 0....
Embodiment 2
[0078] according to image 3 As shown in the process, the sapphire substrate is put into the MOCVD equipment, hydrogen is introduced, and after baking at 1050 °C, the oxides and impurities on the surface of the sapphire substrate are cleaned;
[0079] At a temperature of 1300 °C, AlN layers (with a thickness of 2 μm) were sequentially grown on the surface of the cleaned sapphire substrate, and AlN layers (with a thickness of 2 nm) and Al were grown alternately. 0.8 Ga 0.2 N layer (thickness 4nm) for 20 cycles, growing undoped Al 0.65 Ga 0.35 N layer (thickness 1 μm), growing N-type doped Al 0.65 Ga 0.35 N layer (thickness is 0.5 μm, N-type Si doping concentration is 8×10 18 cm -3 ), growing N-type doped Al 0.5 Ga 0.5 N layer (thickness is 0.5 μm, N-type Si doping concentration is 1.5×10 19 cm -3 ), growing Al 0.18 In 0.01 Ga 0.81 N / Al 0.6 In 0.01 Ga 0.39 N superlattice layer electron buffer layer, the period number of the superlattice is 30, Al 0.18 In 0.01 G...
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