Amplifier based on cross modulation cancellation technology

Abstract

The invention discloses an amplifier based on an intermodulation cancellation technology. The amplifier comprises an input matching network, a main path AB type active self-bias amplification network, an auxiliary path C type active self-bias cancellation network and an output matching network. The active self-bias improved Darlington amplification structure is adopted, the high-frequency gain characteristic of the amplifier can be remarkably improved, the isolation index is improved, meanwhile, in combination with the cross-modulation cancellation technology, the negative third-order cross-modulation component of the main path AB type active self-bias amplification network is counteracted through the positive third-order cross-modulation component of the auxiliary path C type active self-bias cancellation network, and therefore the high-frequency gain characteristic of the amplifier can be remarkably improved. Therefore, the IP3 index and the P1dB index of the amplifier are improved, the power consumption is low, and the circuit structure is relatively simple.

Description

technical field [0001] The invention belongs to the technical field of 5G communication and integrated circuits, and in particular relates to the design of an amplifier based on intermodulation cancellation technology. Background technique [0002] With the rapid development of key electronic equipment such as CATV systems, optical fiber transceivers, instrumentation systems, and base station pre-driver amplifiers, their bandwidth rate indicators continue to increase, which has led to higher requirements for the linearity indicators of the drive amplifiers in the market. [0003] In order to improve the linearization index of the drive amplifier chip, the following technical means can be used when designing the chip, but there are some shortcomings in these means: [0004] (1) Power back-off technology, that is, select a transistor with higher power as a low-power transistor, so that the amplifier works in the back-off linear amplification region to obtain a high linearity i...

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Problems solved by technology

[0004] (1) Power back-off technology, that is, select a transistor with higher power as a low-power transistor, so that the amplifier works in the back-off linear amplification region to obtain a high linearity index, but at the cost of sacrificing DC power consumption, the efficiency of the amplifier lower

[0005] (2) Analog pre-distortion technology, since the chip design stage can be realized by adding an analog pre-distortion circuit with a structure such as a diode, but because the improvement space of the pre-distortion technology is relatively limited, the improvement effect is not good

[0006] (3) Feedforward technology, adding coupling circuits, attenuation circuits, power synthesis circuits, delay circuits and other structures, using the amplifier's intermodulation component cancellation technology to improve the linearity index of amplification. This method has a good improvement effect, but the circuit structure is extremely Complex, difficult to integrate on-chip

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