Unlock instant, AI-driven research and patent intelligence for your innovation.

MEMS device with improved stress distribution and process for manufacturing same

A device and process technology, applied in the field of MEMS devices with improved stress distribution and their manufacturing processes, can solve the problems of increased complexity and cost of MEMS devices, insufficient to reduce damage to conductive rails, etc.

Pending Publication Date: 2022-04-19
STMICROELECTRONICS SRL
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this involves using a more complex and expensive process, leading to increased complexity and cost in the production of MEMS devices
Also, these precautions may not be enough to reduce the chances of the conductor rail being damaged during use

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MEMS device with improved stress distribution and process for manufacturing same
  • MEMS device with improved stress distribution and process for manufacturing same
  • MEMS device with improved stress distribution and process for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050] In the following, electronic devices fabricated using MEMS ("Micro-Electro-Mechanical Systems") technology, in particular MEMS micromirrors, are described.

[0051] figure 1 and figure 2 A MEMS micromirror 1 is shown symmetrical with respect to an axis of rotation A parallel to a first axis X of a Cartesian reference system XYZ.

[0052] The MEMS micromirror 1 is here formed in a die 5 delimited by a top surface 5A and comprising a plurality of semiconductor material (eg silicon) substrates bonded to each other.

[0053] In this embodiment, the die 5 is formed by a first substrate 6 and a second substrate 7, which are bonded to each other by bonding elements 8, eg silicon oxide.

[0054] The first substrate 6 has a thickness Z 1 , for example comprised between 15 μm and 400 μm, and covered by one or more insulating layers (here simply referred to as insulating layers 9 ) delimited by the top surface 5A of the die 5 . The insulating layer 9 is thin, having a thickn...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The embodiment of the invention relates to a MEMS device with improved stress distribution and a manufacturing process thereof. The MEMS device is formed from a body of semiconductor material that defines a support structure. A through cavity in the semiconductor material body is surrounded by the support structure. A movable structure is suspended in the through-type cavity. A resilient structure extends in the through cavity between the support structure and the movable structure. The resilient structure has a first portion and a second portion and is subjected to mechanical stress in use. The MEMS device is also formed from a metal region that extends over the first portion of the resilient structure and is formed from a buried cavity in the resilient structure. The buried cavity extends between the first portion and the second portion of the resilient structure.

Description

[0001] related application [0002] This disclosure claims Italian Patent Application No. 102020000024352, filed October 15, 2020, the content of which is incorporated by reference in its entirety to the fullest extent permitted by law. technical field [0003] The present disclosure relates to a MEMS device with improved stress distribution and its fabrication process. Background technique [0004] As is well known, MEMS ("microelectromechanical systems") electronics, such as actuators and / or sensors, are typically formed on a substrate housing a cavity and include a movable structure suspended over the cavity and The fixing area is limited by elastic elements. The substrate, movable structure and elastic element may be unitary and are typically formed of a semiconductor material such as silicon. [0005] These electronic devices also include: one or more actuation and / or detection structures, coupled to the movable structure; and electrical control circuits, either inte...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B81B3/00B81B7/02B81C1/00
CPCB81B3/0072B81B3/0018B81B7/02B81C1/00134B81C1/00666B81B2201/042
Inventor N·博尼L·文奇盖拉R·卡尔米纳蒂M·默利
Owner STMICROELECTRONICS SRL