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Schottky barrier diode structure with polarized p-type doped [0001] crystal orientation aluminum gallium nitrogen field ring terminal

A Schottky potential, AlGaN technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of device forward characteristic degradation, reduce device reliability, etc., to weaken the electric field crowding effect, reduce strong electric field , Improve the effect of breakdown voltage

Pending Publication Date: 2022-04-19
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these field ring technologies will reduce the reliability of the device to a certain extent, and even increase the forward conduction resistance of the device, resulting in the degradation of the forward characteristics of the device

Method used

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  • Schottky barrier diode structure with polarized p-type doped [0001] crystal orientation aluminum gallium nitrogen field ring terminal
  • Schottky barrier diode structure with polarized p-type doped [0001] crystal orientation aluminum gallium nitrogen field ring terminal
  • Schottky barrier diode structure with polarized p-type doped [0001] crystal orientation aluminum gallium nitrogen field ring terminal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] In this embodiment, a kind of aluminum gallium nitride (Al gallium nitride (Al x→0 Ga 1-x→1 N) The Schottky barrier diode structure of the field ring terminal is as follows figure 2 As shown, the structure is a cylinder, symmetrical to the center, and the specific diameter of the device is 32 μm. The structure along the device epitaxial direction is as follows: ohmic contact electrodes 101, N + Substrate 102, N - Drift layer 103, N - Three concentric Al with different radii are distributed on the drift layer 103 x→0 Ga 1-x→1 N field rings 105; the distance between the field rings 105 is 2 μm, and the outermost layer of Al x→0 Ga 1-x→1 The width of the N field ring 105 is 5 μm, and the width of the inner field ring is the same, both are 3 μm;

[0044] The above-mentioned outermost Al x→0 Ga 1-x→1 The inner edge of the N field ring 105 and the inner layer Al x→0 Ga 1-x→1 N field ring 105 is covered with ohmic contact electrode 106, on ohmic contact electrode ...

Embodiment 2

[0065] Other steps are the same as in Embodiment 1, the difference is that the substrate 102 material is replaced by Ga 2 o 3 ;

[0066] The performance of the obtained device is close to that of Example 1.

Embodiment 3

[0068] Other steps are with embodiment 1, difference is N - Five concentric Al with different radii are distributed on the drift layer 103 x→ 0 Ga 1-x→1 N field rings 105; the distance between the field rings 105 is 1 μm, and the outermost layer of Al x→0 Ga 1-x→1 The width of the N field ring 105 is 3.5 μm, and the width of the inner field ring is the same, both are 2 μm;

[0069] The performance of the obtained device is close to that of Example 1.

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Abstract

The invention relates to a Schottky barrier diode structure with a polarized p-type doped [0001] crystal orientation aluminum gallium nitrogen field ring terminal. The device structure sequentially comprises an ohmic contact electrode, an N + substrate and an N-drift layer along the epitaxial growth direction, 2-10 concentric Alx-> 0Ga1-x-> 1N field rings with different radiuses are distributed on the N <-> drift layer; ohmic contact electrodes cover the inner edge of the outermost Alx-> 0Ga1-x-> 1N field ring and the inner Alx-> 0Ga1-x-> 1N field ring, and Schottky electrodes are arranged on the ohmic contact electrodes and in grooves between the Alx-> 0Ga1-x-> 1N field rings. The breakdown voltage of the device can be effectively improved, forward characteristic degradation of the device cannot be caused, and the preparation method is high in operability, low in cost, simple and reliable in process and suitable for industrial application and popularization.

Description

technical field [0001] The invention relates to the field of power electronic devices, in particular to an aluminum gallium nitride (Al gallium nitride (Al x→0 Ga 1-x→1 N) Schottky barrier diode structure and preparation method of field ring termination. Background technique [0002] At this stage, power electronic device technology is the key core device for the development of national "core" infrastructure projects, mainly involving communication, electric power, transportation, digital and other key industries of social reputation; Transportation and high-efficiency new energy vehicles are the fundamental driving force to achieve the goal of "carbon peaking and carbon neutrality". In recent years, wide bandgap semiconductor materials such as silicon carbide (SiC), gallium nitride (GaN), and even gallium oxide (Ga 2 o 3 ) and other materials have received extensive attention from many researchers, and have gradually begun to replace power devices based on silicon (Si)....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/20H01L29/06
CPCH01L29/872H01L29/0619H01L29/2003
Inventor 张紫辉黄福平楚春双张勇辉
Owner HEBEI UNIV OF TECH