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Semiconductor device

A semiconductor and metal layer technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., to achieve the effect of improving thermal cycle resistance

Pending Publication Date: 2022-05-10
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In terms of cracks, cracks develop from the electrodes to the inside of the semiconductor device, and depending on the situation, the semiconductor device may be electrically damaged, which becomes a problem for improving the thermal cycle resistance of the product

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 2

[0061] Figure 8 is a cross-sectional view showing the structure of IGBT 200 according to Embodiment 2 of the present invention, and figure 1 Corresponds to the sectional view in the direction of the arrow at the B-B line in . In addition, the upper surface structure of IGBT200 is the same as figure 1 The top view of IGBT 100 shown is the same.

[0062] Such as Figure 8 As shown, the hole 91 of the emitter peripheral electrode 3b of the IGBT 200 is formed larger than the hole 9 of the emitter central electrode 3a. By making the hole portion 91 in the emitter outer peripheral electrode 3b larger, cracks (interfacial delamination) generated when a thermal cycle is applied to the IGBT 200 can be made more reliably in the horizontal direction of the emitter outer peripheral electrode 3b. The development can suppress the development of peeling in the vertical direction, that is, the thickness direction of the IGBT 200, suppress the damage of the element structure of the IGBT 2...

Embodiment approach 5

[0092] Figure 13 is a cross-sectional view showing the structure of IGBT 500 according to Embodiment 5 of the present invention, and figure 1 Corresponds to the sectional view in the direction of the arrow at the B-B line in . In addition, the upper surface structure of IGBT500 is the same as figure 1 The top view of IGBT 100 shown is the same.

[0093] Such as Figure 13 As shown, the IGBT 500 has a structure in which no trench gate electrode 11 is provided under the emitter peripheral electrode 3b, that is, a unit cell (unit cell), which is the minimum unit structure of the IGBT.

[0094] By adopting the above structure, the flatness of the metal layer 6 of the emitter peripheral electrode 3b is improved, and cracks (interfacial peeling) generated when a thermal cycle is applied to the IGBT 500 are formed between the metal layer 7 and the metal layer 7 of the emitter peripheral electrode 3b. The interface of the layer 6 tends to develop in the horizontal direction, and ...

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Abstract

A semiconductor device includes a semiconductor substrate having an active region through which a main current flows and a terminal region further outward than the active region, the semiconductor substrate including: a first main electrode provided on the active region; a second main electrode provided on the opposite side of the semiconductor substrate from the first main electrode; a protective film covering at least the end region; and an electroless plating layer provided on the first main electrode not covered by the protective film, the first main electrode having: a central electrode in a central portion; and an outer peripheral electrode provided along the central electrode at a distance from the central electrode, the protective film being provided from the tip region to the edge portion of the outer peripheral electrode, the central electrode and the outer peripheral electrode having: a first metal layer; and a second metal layer that is provided on the first metal layer and contains aluminum, and at least the outer peripheral electrode has a hole portion that penetrates the second metal layer and reaches the first metal layer.

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly to a semiconductor device in which an external electrode electrically connected to the outside and a main electrode of the semiconductor device are solder-bonded. Background technique [0002] In conventional semiconductor devices, in order to reduce the conduction resistance of the semiconductor device, for example, Patent Document 1 discloses a structure in which surface electrodes and external electrodes are joined by solder. In this structure, tensile stress is applied to the surface electrodes due to thermal cycles during energization, and cracks may be generated from the ends of the electrodes. Cracks develop from the electrodes to the inside of the semiconductor device, and depending on the situation, the semiconductor device may be electrically damaged, which is a problem for improving the thermal cycle resistance of the product. [0003] In addition, since the sold...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/12H01L29/739H01L29/78
CPCH01L29/7397H01L29/417H01L29/0649H01L29/0696H01L29/401H01L24/03H01L24/05H01L2224/03464H01L2224/05011H01L2224/05083H01L2224/05124H01L2224/05155H01L2224/05166H01L2924/13055H01L2924/35121
Inventor 大佐贺毅
Owner MITSUBISHI ELECTRIC CORP