Composite straight string structure of metal oxide lightning arrester of power semiconductor device

Abstract

The invention provides a metal oxide arrester combined type straight string structure of a power semiconductor device, which comprises a turn-off tube unit, and is characterized in that the turn-off tube unit comprises a turn-off tube and a combined type auxiliary circuit connected with the turn-off tube; the composite auxiliary circuit comprises a buffer branch and a metal oxide arrester branch which are connected in parallel. According to the metal oxide lightning arrester combined type straight string structure of the power semiconductor device, on the basis that dynamic and static voltage sharing is achieved through the buffer branch and the metal oxide lightning arrester branch which are connected in parallel, rapid turn-off is achieved, overvoltage is suppressed, and when a certain power semiconductor device is rejected to be turned on, the power semiconductor device can be turned off rapidly. Other power semiconductor devices are effectively protected from being damaged; the voltage balance of the power semiconductor device in the turn-on and turn-off processes can be realized, the overvoltage can be suppressed, and the power semiconductor device can be protected from being damaged by the overvoltage.

Description

technical field [0001] The invention belongs to the field of high-voltage direct-current transmission, and in particular relates to a metal oxide surge arrester (MOV) composite straight-series structure of a power semiconductor device. Background technique [0002] High-voltage direct current transmission technology (HVDC, High-Voltage Direct Current) is currently widely used due to its advantages of large transmission capacity, low loss, and high reliability. The core technology for energy conversion and AC / DC transmission using HVDC technology is power electronics technology, and the most critical components are power semiconductor devices. Since HVDC power transmission requires high voltage levels and large transmission capacity, a large number of power semiconductor devices are required to be directly connected in series. The direct series of a large number of power semiconductor devices has been difficult to realize on a large scale worldwide due to the differences in ...

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Problems solved by technology

[0007] In the existing high-voltage direct current transmission technology, it is urgent to realize the ideal straight-series structure of power semiconductor devices in devices such as high-voltage direct current converters, circuit breakers, and energy-consuming devices, so as to solve the large-scale problems of current existing power semiconductor devices. It is difficult to connect in series, and it is difficult to realize the direct connection

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